Datasheet

R8C/L35C Group, R8C/L36C Group, R8C/L38C Group, R8C/L3AC Group 1. Overview
R01DS0095EJ0101 Rev.1.01 Page 6 of 72
Apr 15, 2011
Table 1.6 Specifications (3)
Note:
1. Specify the D version if D version functions are to be used.
Item Specification
Flash Memory • Programming and erasure voltage: VCC = 2.7 to 5.5 V
• Programming and erasure endurance: 10,000 times (data flash)
1,000 times (program ROM)
• Program security: ROM code protect, ID code check
• On-chip debug function
• On-board flash rewrite function
• Background operation (BGO) function
Operating Frequency/
Supply Voltage
f(XIN) = 20 MHz (VCC = 2.7 to 5.5 V)
f(XIN) = 5 MHz (VCC = 1.8 to 5.5 V)
Current Consumption Typ. 7 mA (VCC = 5.0 V, f(XIN) = 20 MHz)
Typ. 3.6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)
Typ. 3.5 µA (VCC = 3.0 V, wait mode (f(XCIN) = 32 kHz))
Typ. 2 µA (VCC = 3.0 V, stop mode)
Typ. 0.02 µA (VCC = 3.0 V, power-off mode)
Operating Ambient Temperature -20 to 85°C (N version)
-40 to 85°C (D version)
(1)