Datasheet

R8C/38C Group 5. Electrical Characteristics
R01DS0017EJ0110 Rev.1.10 Page 47 of 55
Nov 02, 2010
Note:
1. 2.7 V
≤ VCC < 4.2 V, Topr = −20 to 85 °C (N version)/−40 to 85 °C (D version), and f(XIN) = 10 MHz, unless otherwise
specified.
Table 5.24 Electrical Characteristics (3) [2.7 V ≤ VCC < 4.2 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Other than XOUT Drive capacity High IOH = −5 mA VCC − 0.5 — VCC V
Drive capacity Low I
OH = −1 mA VCC − 0.5 — VCC V
XOUT I
OH = −200 µA1.0 — VCC V
V
OL Output “L” voltage Other than XOUT Drive capacity High IOL = 5 mA — — 0.5 V
Drive capacity Low I
OL = 1 mA — — 0.5 V
XOUT I
OL = 200 µA— —0.5V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, INT4,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRDIOA0, TRDIOB0,
TRDIOC0,
TRDIOD0, TRDIOA1,
TRDIOB1, TRDIOC1,
TRDIOD1, TRCTRG,
TRCCLK, TRFI,
TRGIOA, TRGIOB,
ADTRG
, RXD0,
RXD1, RXD2, CLK0,
CLK1, CLK2, SSI,
SCL, SDA, SSO
V
CC = 3.0 V 0.1 0.4 — V
RESET
VCC = 3.0 V 0.1 0.5 — V
I
IH Input “H” current VI = 3 V, VCC = 3.0 V — — 4.0 µA
I
IL Input “L” current VI = 0 V, VCC = 3.0 V — — −4.0 µA
R
PULLUP Pull-up resistance VI = 0 V, VCC = 3.0 V 42 84 168 kΩ
RfXIN Feedback
resistance
XIN — 0.3 — MΩ
RfXCIN Feedback
resistance
XCIN — 8 — MΩ
VRAM RAM hold voltage During stop mode 1.8 — — V