Datasheet

R8C/36C Group 5. Electrical Characteristics
R01DS0018EJ0110 Rev.1.10 Page 45 of 59
Nov 02, 2010
Note:
1. 4.2 V
≤ VCC ≤ 5.5 V, Topr = −20 to 85 °C (N version)/−40 to 85 °C (D version), and f(XIN) = 20 MHz, unless otherwise
specified.
Table 5.17 Electrical Characteristics (1) [4.2 V ≤ VCC ≤ 5.5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H”
voltage
Other than XOUT Drive capacity High VCC = 5 V IOH = −20 mA VCC − 2.0 — VCC V
Drive capacity Low V
CC = 5 V IOH = −5 mA VCC − 2.0 — VCC V
XOUT V
CC = 5 V IOH = −200 µA1.0 —VCC V
V
OL Output “L”
voltage
Other than XOUT Drive capacity High VCC = 5 V IOL = 20 mA — — 2.0 V
Drive capacity Low V
CC = 5 V IOL = 5 mA — — 2.0 V
XOUT V
CC = 5 V IOL = 200 µA— —0.5V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, INT4,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRDIOA0, TRDIOB0,
TRDIOC0, TRDIOD0,
TRDIOA1, TRDIOB1,
TRDIOC1, TRDIOD1,
TRCTRG, TRCCLK,
TRFI, TRGIOA,
TRGIOB, ADTRG
,
RXD0, RXD1, RXD2,
CLK0, CLK1, CLK2,
SSI, SCL, SDA, SSO
0.1 1.2 — V
RESET
0.1 1.2 — V
I
IH Input “H” current VI = 5 V, VCC = 5.0 V — — 5.0 µA
I
IL Input “L” current VI = 0 V, VCC = 5.0 V — — −5.0 µA
R
PULLUP Pull-up resistance VI = 0 V, VCC = 5.0 V 25 50 100 kΩ
RfXIN Feedback
resistance
XIN — 0.3 — MΩ
RfXCIN Feedback
resistance
XCIN — 8 — MΩ
VRAM RAM hold voltage During stop mode 1.8 — — V