Datasheet

R8C/35C Group 5. Electrical Characteristics
R01DS0006EJ0100 Rev 1.00 Page 46 of 54
Aug. 24, 2010
Note:
1. 2.7 V
≤ VCC < 4.2 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 10 MHz, unless otherwise
specified.
Table 5.23 Electrical Characteristics (3) [2.7 V ≤ Vcc < 4.2 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Other than XOUT Drive capacity High IOH = −5 mA VCC − 0.5 − VCC V
Drive capacity Low I
OH = −1 mA VCC − 0.5 − VCC V
XOUT I
OH = −200 µA1.0 − VCC V
V
OL Output “L” voltage Other than XOUT Drive capacity High IOL = 5 mA −−0.5 V
Drive capacity Low I
OL = 1 mA −−0.5 V
XOUT I
OL = 200 µA −−0.5 V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, INT4,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRDIOA0,
TRDIOB0,
TRDIOC0,
TRDIOD0,
TRDIOA1,
TRDIOB1,
TRDIOC1,
TRDIOD1,
TRCTRG, TRCCLK,
ADTRG
,
RXD0, RXD1,
RXD2, CLK0,
CLK1, CLK2, SSI,
SCL, SDA, SSO
V
CC = 3.0 V 0.1 0.4 − V
RESET
VCC = 3.0 V 0.1 0.5 − V
I
IH Input “H” current VI = 3 V, VCC = 3.0 V −−4.0 µA
I
IL Input “L” current VI = 0 V, VCC = 3.0 V −−−4.0 µA
R
PULLUP Pull-up resistance VI = 0 V, VCC = 3.0 V 42 84 168 kΩ
RfXIN Feedback resistance XIN − 0.3 − MΩ
RfXCIN Feedback resistance XCIN − 8 − MΩ
VRAM RAM hold voltage During stop mode 1.8 −−V