Datasheet

R8C/35C Group 5. Electrical Characteristics
R01DS0006EJ0100 Rev 1.00 Page 42 of 54
Aug. 24, 2010
Note:
1. 4.2 V
≤ VCC ≤ 5.5 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.
Table 5.17 Electrical Characteristics (1) [4.2 V ≤ Vcc ≤ 5.5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H”
voltage
Other than XOUT Drive capacity High VCC = 5 V IOH = −20 mA VCC − 2.0 − VCC V
Drive capacity Low V
CC = 5 V IOH = −5 mA VCC − 2.0 − VCC V
XOUT V
CC = 5 V IOH = −200 µA1.0 − VCC V
V
OL Output “L”
voltage
Other than XOUT Drive capacity High VCC = 5 V IOL = 20 mA −−2.0 V
Drive capacity Low V
CC = 5 V IOL = 5 mA −−2.0 V
XOUT V
CC = 5 V IOL = 200 µA −−0.5 V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, INT4,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRDIOA0, TRDIOB0,
TRDIOC0,
TRDIOD0, TRDIOA1,
TRDIOB1, TRDIOC1,
TRDIOD1, TRCTRG,
TRCCLK, ADTRG
,
RXD0, RXD1, RXD2,
CLK0, CLK1, CLK2,
SSI, SCL, SDA, SSO
0.1 1.2
− V
RESET
0.1 1.2 − V
I
IH Input “H” current VI = 5 V, VCC = 5.0 V −−5.0 µA
I
IL Input “L” current VI = 0 V, VCC = 5.0 V −−−5.0 µA
R
PULLUP Pull-up resistance VI = 0 V, VCC = 5.0 V 25 50 100 kΩ
RfXIN Feedback
resistance
XIN − 0.3 − MΩ
RfXCIN Feedback
resistance
XCIN − 8 − MΩ
VRAM RAM hold voltage During stop mode 1.8 −−V