Datasheet

R8C/33T Group 5. Electrical Characteristics
R01DS0046EJ0110 Rev.1.10 Page 39 of 47
Apr 26, 2011
Note:
1. 2.7 V
≤ Vcc < 4.2 V at Topr = −20°C to 85°C (N version), f(XIN) = 10 MHz, unless otherwise specified.
Table 5.19 Electrical Characteristics (3) [2.7 V ≤ Vcc < 4.2 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H”
voltage
Other than XOUT Drive capacity High IOH = −5 mA Vcc − 0.5 — Vcc V
Drive capacity Low I
OH = −1 mA Vcc − 0.5 — Vcc V
XOUT I
OH = −200 µA1.0 — Vcc V
V
OL Output “L”
voltage
Other than XOUT Drive capacity High IOL = 5 mA — — 0.5 V
Drive capacity Low I
OL = 1 mA — — 0.5 V
XOUT I
OL = 200 µA— — 0.5V
V
T+-VT- Hysteresis
INT0
, INT1,
INT2
, INT3,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
ADTRG
,
RXD0, RXD2,
CLK0, CLK2,
SCL2, SDA2
Vcc = 3.0 V 0.1 0.4 — V
RESET
Vcc = 3.0 V 0.1 0.5 — V
I
IH Input “H” current VI = 3 V, Vcc = 3.0 V — — 4.0 µA
I
IL Input “L” current VI = 0 V, Vcc = 3.0 V — — −4.0 µA
R
PULLUP Pull-up resistance VI = 0 V, Vcc = 3.0 V 42 84 168 kΩ
RfXIN Feedback
resistance
XIN — 0.3 — MΩ
VRAM RAM hold voltage During stop mode 1.8 — — V