Datasheet

R8C/33T Group 5. Electrical Characteristics
R01DS0046EJ0110 Rev.1.10 Page 35 of 47
Apr 26, 2011
Note:
1. 4.2 V
≤ Vcc ≤ 5.5 V at Topr = −20°C to 85°C (N version), f(XIN) = 20 MHz, unless otherwise specified.
Table 5.13 Electrical Characteristics (1) [4.2 V ≤ Vcc ≤ 5.5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H”
voltage
Other than XOUT Drive capacity High Vcc = 5 V IOH = −20 mA Vcc − 2.0 — Vcc V
Drive capacity Low Vcc = 5 V I
OH = −5 mA Vcc − 2.0 — Vcc V
XOUT Vcc = 5 V I
OH = −200 µA1.0 — VccV
V
OL Output “L”
voltage
Other than XOUT Drive capacity High Vcc = 5 V IOL = 20 mA — — 2.0 V
Drive capacity Low Vcc = 5 V I
OL = 5 mA — — 2.0 V
XOUT Vcc = 5 V I
OL = 200 µA— —0.5V
V
T+-VT- Hysteresis
INT0
, INT1,
INT2
, INT3,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
ADTRG
,
RXD0, RXD2,
CLK0, CLK2,
SCL2, SDA2
0.1 1.2 — V
RESET
0.1 1.2 — V
I
IH Input “H” current VI = 5 V, Vcc = 5.0 V — — 5.0 µA
I
IL Input “L” current VI = 0 V, Vcc = 5.0 V — — −5.0 µA
R
PULLUP Pull-up resistance VI = 0 V, Vcc = 5.0 V 25 50 100 kΩ
RfXIN Feedback
resistance
XIN — 0.3 — MΩ
VRAM RAM hold voltage During stop mode 1.8 — — V