Datasheet

R8C/32D Group 5. Electrical Characteristics
REJ03B0288-0100 Rev.1.00 Feb 26, 2010
Page 34 of 42
Note:
1. 2.7 V ≤ VCC < 4.2 V at Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 10 MHz, unless otherwise specified.
Table 5.19 Electrical Characteristics (3) [2.7 V ≤ Vcc < 4.2 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Other than XOUT Drive capacity High IOH = −5 mA VCC − 0.5 − VCC V
Drive capacity Low IOH = −1 mA VCC − 0.5 − VCC V
XOUT IOH = −200 µA1.0 − VCC V
VOL Output “L” voltage Other than XOUT Drive capacity High IOL = 5 mA −−0.5 V
Drive capacity Low IOL = 1 mA −−0.5 V
XOUT IOL = 200 µA −−0.5 V
VT+-VT- Hysteresis
INT0
, INT1, INT3,
KI0
, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
ADTRG
,
RXD0, RXD2,
CLK0, CLK2
VCC = 3.0 V 0.1 0.4 − V
RESET
VCC = 3.0 V 0.1 0.5 − V
IIH Input “H” current VI = 3 V, VCC = 3.0 V −−4.0 µA
IIL Input “L” current VI = 0 V, VCC = 3.0 V −−−4.0 µA
RPULLUP Pull-up resistance VI = 0 V, VCC = 3.0 V 42 84 168 kΩ
RfXIN Feedback resistance XIN − 0.3 − MΩ
RfXCIN Feedback resistance XCIN − 8 − MΩ
VRAM RAM hold voltage During stop mode 1.8 −−V