Datasheet

R8C/2E Group, R8C/2F Group 1. Overview
Rev.1.00 Dec 14, 2007 Page 3 of 39
REJ03B0222-0100
NOTE:
1. Specify the D version if D version functions are to be used.
Table 1.2 Specifications for R8C/2E Group (2)
Item Specification
Flash Memory • Programming and erasure voltage: VCC = 2.7 to 5.5 V
• Programming and erasure endurance: 100 times
• Program security: ROM code protect, ID code check
• Debug functions: On-chip debug, on-board flash rewrite function
Operating Frequency/Supply
Voltage
f(XIN) = 20 MHz (VCC = 3.0 to 5.5 V),
f(XIN) = 10 MHz (VCC = 2.7 to 5.5 V)
Current consumption Typ. 10 mA (VCC = 5.0 V, f(XIN) = 20 MHz)
Typ. 6 mA (VCC = 3.0 V, f(XIN) = 10 MHz)
Typ. 23 µA (VCC = 3.0 V, wait mode (peripheral clock off))
Typ. 0.7 µA (VCC = 3.0 V, stop mode)
Operating Ambient Temperature -20 to 85°C (N version)
-40 to 85°C (D version)
(1)
Package 32-pin LQFP
Package code: PLQP0032GB-A (previous code: 32P6U-A)