Datasheet

R8C/28 Group, R8C/29 Group 5. Electrical Characteristics
Rev.2.10 Sep 26, 2008 Page 53 of 67
REJ03B0169-0210
NOTES:
1. V
CC = 2.7 to 5.5 V, Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. These standard values show when the FRA1 register value after reset is assumed.
NOTE:
1. V
CC = 2.7 to 5.5 V, Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
NOTES:
1. The measurement condition is V
CC = 2.7 to 5.5 V and Topr = 25°C.
2. Waiting time until the internal power supply generation circuit stabilizes during power-on.
3. Time until system clock supply starts after the interrupt is acknowledged to exit stop mode.
Table 5.42 High-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
fOCO40M High-speed on-chip oscillator frequency
temperature • supply voltage dependence
V
CC = 4.75 to 5.25 V
0
°C ≤ Topr ≤ 60°C
(2)
39.2 40 40.8 MHz
V
CC = 3.0 to 5.5 V
-20
°C ≤ Topr ≤ 85°C
(2)
38.8 40 41.2 MHz
V
CC = 3.0 to 5.5 V
-40
°C ≤ Topr ≤ 85°C
(2)
38.4 40 41.6 MHz
V
CC = 3.0 to 5.5 V
-40
°C ≤ Topr ≤ 125°C
(2)
38 40 42 MHz
V
CC = 2.7 to 5.5 V
-40
°C ≤ Topr ≤ 125°C
(2)
37.6 40 42.4 MHz
− Value in FRA1 register after reset 08h − F7h −
−
Oscillation frequency adjustment unit of high-
speed on-chip oscillator
Adjust FRA1 register
(value after reset) to -1
− +0.3 − MHz
− Oscillation stability time − 10 100 µs
− Self power consumption at oscillation VCC = 5.0 V, Topr = 25°C − 400 −µA
Table 5.43 Low-speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
fOCO-S Low-speed on-chip oscillator frequency 40 125 250 kHz
− Oscillation stability time − 10 100 µs
− Self power consumption at oscillation VCC = 5.0 V, Topr = 25°C − 15 −µA
Table 5.44 Power Supply Circuit Timing Characteristics
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
t
d(P-R) Time for internal power supply stabilization during
power-on
(2)
1 − 2000 µs
t
d(R-S)
STOP exit time
(3)
−−150 µs