Datasheet

R8C/24 Group, R8C/25 Group 5. Electrical Characteristics
Rev.3.00 Feb 29, 2008 Page 47 of 51
REJ03B0117-0300
NOTE:
1. V
CC = 2.2 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), f(XIN) = 5 MHz, unless otherwise specified.
Table 5.28 Electrical Characteristics (5) [VCC = 2.2 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Except P2_0 to P2_7,
XOUT
IOH = -1 mA VCC - 0.5 − VCC V
P2_0 to P2_7 Drive capacity
HIGH
I
OH = -2 mA VCC - 0.5 − VCC V
Drive capacity
LOW
I
OH = -1 mA VCC - 0.5 − VCC V
XOUT Drive capacity
HIGH
I
OH = -0.1 mA VCC - 0.5 − VCC V
Drive capacity
LOW
I
OH = -50 µAVCC - 0.5 − VCC V
V
OL Output “L” voltage Except P2_0 to P2_7,
XOUT
IOL = 1 mA −−0.5 V
P2_0 to P2_7 Drive capacity
HIGH
I
OL = 2 mA −−0.5 V
Drive capacity
LOW
I
OL = 1 mA −−0.5 V
XOUT Drive capacity
HIGH
I
OL = 0.1 mA −−0.5 V
Drive capacity
LOW
I
OL = 50 µA −−0.5 V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, KI0, KI1, KI2,
KI3
, TRAIO, RXD0,
RXD1, CLK0, CLK1,
SSI, SCL, SDA, SSO
0.05 0.3
− V
RESET
0.05 0.15 − V
I
IH Input “H” current VI = 2.2 V −−4.0 µA
I
IL Input “L” current VI = 0 V −−-4.0 µA
R
PULLUP Pull-up resistance VI = 0 V 100 200 600 kΩ
RfXIN Feedback resistance XIN − 5 − MΩ
RfXCIN Feedback resistance XCIN − 35 − MΩ
VRAM RAM hold voltage During stop mode 1.8 −−V