Datasheet

R8C/24 Group, R8C/25 Group 5. Electrical Characteristics
Rev.3.00 Feb 29, 2008 Page 38 of 51
REJ03B0117-0300
NOTE:
1. V
CC = 4.2 to 5.5 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.
Table 5.15 Electrical Characteristics (1) [VCC = 5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Except P2_0 to P2_7,
XOUT
IOH = -5 mA VCC − 2.0 − VCC V
I
OH = -200 µAVCC − 0.5 − VCC V
P2_0 to P2_7 Drive capacity HIGH I
OH = -20 mA VCC − 2.0 − VCC V
Drive capacity LOW I
OH = -5 mA VCC − 2.0 − VCC V
XOUT Drive capacity HIGH I
OH = -1 mA VCC − 2.0 − VCC V
Drive capacity LOW I
OH = -500 µAVCC − 2.0 − VCC V
V
OL Output “L” voltage Except P2_0 to P2_7,
XOUT
IOL = 5 mA −−2.0 V
I
OL = 200 µA −−0.45 V
P2_0 to P2_7 Drive capacity HIGH I
OL = 20 mA −−2.0 V
Drive capacity LOW I
OL = 5 mA −−2.0 V
XOUT Drive capacity HIGH I
OL = 1 mA −−2.0 V
Drive capacity LOW I
OL = 500 µA −−2.0 V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, KI0, KI1, KI2,
KI3
, TRAIO, RXD0,
RXD1, CLK0, CLK1,
SSI, SCL, SDA, SSO
0.1 0.5
− V
RESET
0.1 1.0 − V
I
IH Input “H” current VI = 5 V, Vcc = 5V −−5.0 µA
I
IL Input “L” current VI = 0 V, Vcc = 5V −−-5.0 µA
R
PULLUP Pull-up resistance VI = 0 V, Vcc = 5V 30 50 167 kΩ
RfXIN Feedback
resistance
XIN − 1.0 − MΩ
RfXCIN Feedback
resistance
XCIN − 18 − MΩ
VRAM RAM hold voltage During stop mode 1.8 −−V