Datasheet

R8C/18 Group, R8C/19 Group 5. Electrical Characteristics
Rev.1.40 Apr 14, 2006 Page 33 of 38
REJ03B0124-0140
NOTE:
1. V
CC = 2.7 to 3.3 V at Topr = -20 to 85 °C / -40 to 85 °C, f(XIN) = 10 MHz, unless otherwise specified.
Table 5.19 Electrical Characteristics (3) [VCC = 3V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Except XOUT IOH = -1 mA VCC − 0.5 − VCC V
X
OUT Drive capacity
HIGH
IOH = -0.1 mA VCC − 0.5 − VCC V
Drive capacity
LOW
I
OH = -50 µAVCC − 0.5 − VCC V
V
OL Output “L” voltage Except P1_0 to
P1_3, X
OUT
IOL = 1mA −−0.5 V
P1_0 to P1_3 Drive capacity
HIGH
I
OL = 2 mA −−0.5 V
Drive capacity
LOW
I
OL = 1 mA −−0.5 V
X
OUT Drive capacity
HIGH
IOL = 0.1 mA −−0.5 V
Drive capacity
LOW
I
OL = 50 µA −−0.5 V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, KI0, KI1, KI2,
KI3
, CNTR0,
CNTR1, TCIN,
RXD0
0.2 − 0.8 V
RESET
0.2 − 1.8 V
I
IH Input “H” current VI = 3 V −−4.0 µA
I
IL Input “L” current VI = 0 V −−-4.0 µA
R
PULLUP Pull-up resistance VI = 0 V 66 160 500 kΩ
R
fXIN Feedback resistance XIN − 3.0 − MΩ
f
RING-S Low-speed on-chip oscillator frequency 40 125 250 kHz
V
RAM RAM hold voltage During stop mode 2.0 −−V