Datasheet

R8C/18 Group, R8C/19 Group 5. Electrical Characteristics
Rev.1.40 Apr 14, 2006 Page 29 of 38
REJ03B0124-0140
NOTE:
1. V
CC = 4.2 to 5.5 V at Topr = -20 to 85 °C / -40 to 85 °C, f(XIN) = 20 MHz, unless otherwise specified.
Table 5.12 Electrical Characteristics (1) [VCC = 5 V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” voltage Except XOUT IOH = -5 mA VCC − 2.0 − VCC V
I
OH = -200 µAVCC − 0.3 − VCC V
X
OUT Drive capacity
HIGH
IOH = -1 mA VCC − 2.0 − VCC V
Drive capacity
LOW
I
OH = -500 µAVCC − 2.0 − VCC V
V
OL Output “L” voltage Except P1_0 to
P1_3, X
OUT
IOL = 5 mA −−2.0 V
I
OL = 200 µA −−0.45 V
P1_0 to P1_3 Drive capacity
HIGH
I
OL = 15 mA −−2.0 V
Drive capacity
LOW
I
OL = 5 mA −−2.0 V
Drive capacity
LOW
I
OL = 200 µA −−0.45 V
X
OUT Drive capacity
HIGH
IOL = 1 mA −−2.0 V
Drive capacity
LOW
I
OL = 500 µA −−2.0 V
V
T+-VT- Hysteresis
INT0
, INT1, INT2,
INT3
, KI0, KI1, KI2,
KI3
, CNTR0,
CNTR1, TCIN,
RXD0
0.2 − 1.0 V
RESET
0.2 − 2.2 V
I
IH Input “H” current VI = 5 V −−5.0 µA
I
IL Input “L” current VI = 0 V −−-5.0 µA
R
PULLUP Pull-up resistance VI = 0 V 30 50 167 kΩ
R
fXIN Feedback resistance XIN − 1.0 − MΩ
f
RING-S Low-speed on-chip oscillator frequency 40 125 250 kHz
V
RAM RAM hold voltage During stop mode 2.0 −−V