Datasheet

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To our customers,

Old Company Name in Catalogs and Other Documents

On April 1

, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1

, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry

Summary of content (32 pages)

PAGE 1
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.
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Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office.
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R8C/11 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER REJ03B0034-0160 Rev.1.60 Jan 27, 2006 1. Overview This MCU is built using the high-performance silicon gate CMOS process using a R8C/Tiny Series CPU core and is packaged in a 32-pin plastic molded LQFP. This MCU operates using sophisticated instructions featuring a high level of instruction efficiency. With 1M bytes of address space, it is capable of executing instructions at high speed. 1.
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R8C/11 Group 1. Overview 1.2 Performance Overview Table 1.1. lists the performance outline of this MCU. Table 1.1 Performance outline Item Performance CPU Number of basic instructions 89 instructions Minimum instruction execution time 50 ns (f(XIN) = 20 MHZ, VCC = 3.0 to 5.5 V) 100 ns (f(XIN) = 10 MHZ, VCC = 2.7 to 5.5 V) Operating mode Single-chip Address space 1M bytes Memory capacity See Table 1.2.
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R8C/11 Group 1. Overview 1.3 Block Diagram Figure 1.1 shows this MCU block diagram.
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R8C/11 Group 1. Overview 1.4 Product Information Table 1.2 lists the product information. Table 1.2 Product Information As of January 2006 ROM capacity RAM capacity R5F21112FP 8K bytes 512 bytes PLQP0032GB-A R5F21113FP 12K bytes 768 bytes PLQP0032GB-A R5F21114FP 16K bytes 1K bytes PLQP0032GB-A R5F21112DFP 8K bytes 512 bytes PLQP0032GB-A R5F21113DFP 12K bytes 768 bytes PLQP0032GB-A R5F21114DFP 16K bytes 1K bytes PLQP0032GB-A Type No. Type No.
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R8C/11 Group 1. Overview 1.5 Pin Assignments Figure 1.3 shows the pin configuration (top view).
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R8C/11 Group 1. Overview 1.6 Pin Description Table 1.3 shows the pin description Table 1.3 Pin description Signal name Power supply input IVcc Pin name Vcc, Vss IVcc I/O type O Analog power supply input AVcc, AVss I Power supply input pins for A/D converter. Connect the AVcc pin to Vcc. Connect the AVss pin to Vss. Connect a capacitor between pins AVcc and AVss. Reset input CNVss MODE Main clock input RESET CNVss MODE XIN I I I I I I I/O O I/O O I O Input “L” on this pin resets the MCU.
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R8C/11 Group 2. Central Processing Unit (CPU) 2. Central Processing Unit (CPU) Figure 2.1 shows the CPU registers. The CPU has 13 registers. Of these, R0, R1, R2, R3, A0, A1 and FB comprise a register bank. Two sets of register banks are provided.
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R8C/11 Group 2. Central Processing Unit (CPU) 2.2 Address Registers (A0 and A1) A0 is a 16-bit register for address register indirect addressing and address register relative addressing. They also are used for transfer, arithmetic and logic operations. The same applies to A1 as A0. A0 can be combined with A0 to be used as a 32-bit address register (A1A0). 2.3 Frame Base Register (FB) FB is a 16-bit register for FB relative addressing. 2.
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R8C/11 Group 3. Memory 3. Memory Figure 3.1 is a memory map of this MCU. This MCU provides 1-Mbyte address space from addresses 0000016 to FFFFF16. The internal ROM is allocated lower addresses beginning with address 0FFFF16. For example, a 16-Kbyte internal ROM is allocated addresses from 0C00016 to 0FFFF16. The fixed interrupt vector table is allocated addresses 0FFDC16 to 0FFFF16. They store the starting address of each interrupt routine.
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R8C/11 Group 4. Special Function Register (SFR) 4. Special Function Register (SFR) SFR(Special Function Register) is the control register of peripheral functions. Tables 4.1 to 4.4 list the SFR information Table 4.
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R8C/11 Group 4. Special Function Register (SFR) Table 4.
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R8C/11 Group 4. Special Function Register (SFR) Table 4.
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R8C/11 Group 4. Special Function Register (SFR) Table 4.
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R8C/11 Group 5. Electrical Characteristics 5. Electrical Characteristics Table 5.1 Absolute Maximum Ratings Condition Rated value Unit VCC Symbol Supply voltage Parameter VCC=AVCC -0.3 to 6.5 V AVCC Analog supply voltage VCC=AVCC -0.3 to 6.5 V VI Input voltage -0.3 to VCC+0.3 V VO Output voltage -0.3 to VCC+0.3 V Pd Power dissipation 300 mW Topr Operating ambient temperature -20 to 85 / -40 to 85 (D version) C Tstg Storage temperature Topr=25 C C -65 to 150 Table 5.
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R8C/11 Group 5. Electrical Characteristics Table 5.3 A/D Conversion Characteristics Symbol Parameter – Resolution – Absolute accuracy RLADDER Ladder resistance Conversion time tCONV VREF VIA Measuring condition Standard Unit Min. Typ. Max. Vref =VCC 10 Bit 10 bit mode øAD=10 MHz, Vref=Vcc=5.0V ±3 LSB 8 bit mode øAD=10 MHz, Vref=Vcc=5.0V ±2 LSB 10 bit mode øAD=10 MHz, Vref=Vcc=3.3V(3) ±5 LSB 8 bit mode øAD=10 MHz, Vref=Vcc=3.
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R8C/11 Group 5. Electrical Characteristics Table 5.4 Flash Memory Version Electrical Characteristics Symbol Parameter – Program/erase endurance – Byte program time – Block erase time Measuring condition Standard Typ. Unit Max times 100 50 0.4 Time delay from suspend request until erase td(SR-ES) suspend Erase Suspend Request Interval – – Min. 400 µs 9 s 8 ms ms 10 Program, Erase voltage 2.7 5.5 Read voltage 2.7 5.
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R8C/11 Group 5. Electrical Characteristics Table 5.6 Reset Circuit Electrical Characteristics (When Using Hardware Reset 2(1, 3)) Symbol Vpor2 Measuring condition Parameter Power-on reset valid voltage tW(Vpor2- Supply voltage rising time when power-on reset is canceled(2) Vdet) Min. Standard Typ. Max. Unit –20°C ≤ Topr < 85°C Vdet V –20°C ≤ Topr < 85°C, tW(por2) ≥ 0s(4) 100 ms NOTES: 1.
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R8C/11 Group 5. Electrical Characteristics Table 5.8 High-speed On-Chip Oscillator Circuit Electrical Characteristics Symbol Measuring condition Parameter High-speed on-chip oscillator frequency 1 / {td(HRoffset)+td(HR)} when the reset is released Standard Typ. Max. 6 8 10 VCC=5.0V, Topr=25 °C Set "0016" in the HR1 register Differences when setting "0116" and "0016" in the HR register td(HRoffset) Settable high-speed on-chip oscillator minimum period td(HR) VCC=5.
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R8C/11 Group 5. Electrical Characteristics Table 5.11 Electrical Characteristics (2) Symbol [Vcc=5V] Measuring condition Parameter High-speed mode Medium-speed mode ICC Power supply current (VCC=3.3 to 5.
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R8C/11 Group 5. Electrical Characteristics Timing requirements (Unless otherwise noted: VCC = 5V, VSS = 0V at Topr = 25 °C) [VCC=5V] Table 5.12 XIN input Symbol tC(XIN) tWH(XIN) tWL(XIN) Parameter XIN input cycle time XIN input HIGH pulse width XIN input LOW pulse width Standard Min. Max. 50 – 25 – 25 – Unit Standard Min. Max. 100 – 40 – 40 – Unit Standard Min. Max. 400(1) – 200(2) – 200(2) – Unit ns ns ns ________ Table 5.
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R8C/11 Group 5. Electrical Characteristics VCC = 5V tc(CNTR0) tWH(CNTR0) CNTR0 input tWL(CNTR0) tc(TCIN) tWH(TCIN) TCIN input tWL(TCIN) tc(XIN) tWH(XIN) XIN input tWL(XIN) tc(CK) tW(CKH) CLKi tW(CKL) th(C-Q) TxDi td(C-Q) tsu(D-C) RxDi tW(INL) INTi tW(INH) Figure 5.4 Vcc=5V timing diagram Rev.1.
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R8C/11 Group 5. Electrical Characteristics Table 5.17 Electrical Characteristics (3) Symbol [Vcc=3V] Measuring condition Parameter "H" output voltage VOH "L" output voltage VOL Except XOUT IOH=-1mA XOUT Drive capacity HIGH Drive capacity LOW Except P10 to P17, XOUT IOL= 1 mA P10 to P17 Drive capacity HIGH XOUT VT+-VT- Hysteresis II H "H" input current IOH=-0.1 mA IOH=-50 µA Min. VC C V VCC-0.5 VCC-0.5 VCC VC C V V 0 .5 V IOL= 2 mA IOL= 1 mA 0.5 V Drive capacity LOW 0.
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R8C/11 Group 5. Electrical Characteristics Table 5.18 Electrical Characteristics (4) Symbol [Vcc=3V] Measuring condition Parameter High-speed mode Medium-speed mode ICC Power supply current (VCC=2.7 to 3.
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R8C/11 Group 5. Electrical Characteristics Timing requirements (Unless otherwise noted: VCC = 3V, VSS = 0V at Topr = 25 °C) [VCC=3V] Table 5.19 XIN input Symbol tC(XIN) tWH(XIN) tWL(XIN) Parameter XIN input cycle time XIN input HIGH pulse width XIN input LOW pulse width Standard Min. Max. 100 – 40 – 40 – Unit Standard Min. Max. 300 – 120 – 120 – Unit Standard Min. Max. 1200(1) – 600(2) – 600(2) – Unit ns ns ns ________ Table 5.
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R8C/11 Group 5. Electrical Characteristics VCC = 3V tc(CNTR0) tWH(CNTR0) CNTR0 input tWL(CNTR0) tc(TCIN) tWH(TCIN) TCIN input tWL(TCIN) tc(XIN) tWH(XIN) XIN input tWL(XIN) tc(CK) tW(CKH) CLKi tW(CKL) th(C-Q) TxDi td(C-Q) tsu(D-C) RxDi tW(INL) INTi tW(INH) Figure 5.5 Vcc=3V timing diagram Rev.1.
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R8C/11 Group Package Dimensions Package Dimensions JEITA Package Code P-LQFP32-7x7-0.80 RENESAS Code PLQP0032GB-A Previous Code 32P6U-A MASS[Typ.] 0.2g HD *1 D 24 17 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 16 25 bp c c1 HE *2 E b1 Reference Symbol 9 1 ZE Terminal cross section 32 8 ZD c A A1 F A2 Index mark L D E A2 HD HE A A1 bp b1 c c1 L1 y e Rev.1.
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REVISION HISTORY Rev. R8C/11 Group Datasheet Date Description Summary Page 1.00 Jun. 19, 2003 First edition issued 1.10 Sep. 08, 2003 2 5 6 10 12 14 Table 1.1: Shortest instruction execution time ____________ and f(XIN) changed Figure 1.3: Pin name changed from TXOUT to____________ CNTR0 Table 1.3: Pin name changed from TXOUT to CNTR0 The value of HR1 register after reset changed The value of TC register after reset changed Chapter “5. Electrical Characteristics” added 1.20 Oct.
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REVISION HISTORY Rev. R8C/11 Group Datasheet Date Description Summary Page 1.40 Sep 30, 2004 20 22 24 Table 5.12 revised ; Table 5.16 revised Table 16.17 revised Table 16.19 revised 1.50 Apr.27.2005 4 5 10 12 15 16 17 18 22 26 Table 1.2, Figure 1.2 package name revised Figure 1.3 package name revised Table 4.1 revised Table 4.3 revised Table 5.3 partly revised Table 5.4 partly added Table 5.6, Table 5.7 revised Table 5.9, Table 10 partly revised Table 5.
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REVISION HISTORY Rev. R8C/11 Group Datasheet Date Description Summary Page 1.60 Jan.27.2006 19 22 23 Table 5.11 Electrical Characteristics (2) [VCC=5V] NOTES: 1, 2 revised Measuring condition Stop mode: “Topr = 25 °C” Table 5.17 Electrical Characteristics (3) [VCC=3V] “P10 to P17 Except XOUT” → “Except P10 to P17, XOUT” revised Table 5.
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Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.