Datasheet

RL78/L12
CHAPTER 31 ELECTRICAL SPECIFICATIONS (G: TA = -40 to +105°C)
R01UH0330EJ0200 Rev.2.00 960
Dec 13, 2013
31.9 Flash Memory Programming Characteristics
(T
A = −40 to +105°C, 2.4 V ≤ EVDD = VDD ≤ 5.5 V, VSS = EVSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
System clock frequency fCLK 1.8 V ≤ VDD ≤ 5.5 V 1 24 MHz
Number of code flash rewrites
Notes 1, 2, 3
C
erwr Retained for 20 years TA = 85°C 1,000 Times
Number of data flash rewrites
Notes 1, 2, 3
Retained for 1 year T
A = 25°C 1,000,000
Retained for 5 years TA = 85°C 100,000
Retained for 20 years TA = 85°C 10,000
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.
The retaining years are until next rewrite after the rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. This characteristic indicates the flash memory characteristic and based on Renesas Electronics reliability test.
31.10 Dedicated Flash Memory Programmer Communication (UART)
(TA = −40 to +105°C, 2.4 V ≤ EVDD = VDD ≤ 5.5 V, VSS = EVSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate During flash memory programming 115,200 1,000,000 bps