Datasheet

RL78/L12 CHAPTER 30 ELECTRICAL SPECIFICATIONS (A, G: T
A = -40 to +85°C)
R01UH0330EJ0200 Rev.2.00 910
Dec 13, 2013
30.8 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
(TA = −40 to +85°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR 1.46
Note
5.5 V
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR
reset is effected, but data is not retained when a POR reset is effected.
V DD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
Data retention mode
V
DDDR
Operation mode
30.9 Flash Memory Programming Characteristics
(TA = −40 to +85°C, 1.8 V ≤ EVDD = VDD ≤ 5.5 V, VSS = EVSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
System clock frequency fCLK 1.8 V ≤ VDD ≤ 5.5 V 1 24 MHz
Number of code flash rewrites
Note 1, 2, 3
C
erwr Retained for 20 years TA = 85°C 1,000 Times
Number of data flash rewrites
Note 1, 2, 3
Retained for 1 year T
A = 25°C 1,000,000
Retained for 5 years TA = 85°C 100,000
Retained for 20 years TA = 85°C 10,000
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.
The retaining years are until next rewrite after the rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. This characteristic indicates the flash memory characteristic and based on Renesas Electronics reliability test.
Remark When updating data multiple times, use the flash memory as one for updating data.
30.10 Dedicated Flash Memory Programmer Communication (UART)
(T
A = −40 to +85°C, 1.8 V ≤ EVDD = VDD ≤ 5.5 V, VSS = EVSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate During flash memory programming 115,200 1,000,000 bps
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