Datasheet

RL78/G12 2. ELECTRICAL SPECIFICATIONS (A, D: T
A = −40 to +85°C)
R01DS0193EJ0200 Rev.2.00
Sep 06, 2013
Page 60 of 106
2.7 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
(TA = −40 to +85°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR 1.46
Note
5.5 V
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR
reset is affected, but data is not retained when a POR reset is affected.
V DD
V DDDR
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
Data retention mode
Operation mode
2.8 Flash Memory Programming Characteristics
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
System clock frequency fCLK 1 24 MHz
Code flash memory rewritable times
Notes 1, 2, 3
C
erwr Retained for 20 years TA = 85°C 1,000 Times
Data flash memory rewritable times
Notes 1, 2, 3
Retained for 1 year T
A = 25°C 1,000,000
Retained for 5 years TA = 85°C 100,000
Retained for 20 years TA = 85°C 10,000
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. These are the characteristics of the flash memory and the results obtained from reliability testing by
Renesas Electronics Corporation.