Datasheet

RL78/G13 3. ELECTRICAL SPECIFICATIONS (G: T
A = -40 to +105°C)
Page 174 of 194R01DS0131EJ0310 Rev.3.10
Nov 15, 2013
3.7 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
(T
A = −40 to +105°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR
1.44
Note
5.5 V
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a
POR reset is effected, but data is not retained when a POR reset is effected.
V DD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
Data retention mode
V
DDDR
Operation mode
3.8 Flash Memory Programming Characteristics
(T
A = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
CPU/peripheral hardware clock
frequency
fCLK 2.4 V ≤ VDD ≤ 5.5 V 1 32 MHz
Number of code flash rewrites
Notes 1,2,3
C
erwr Retained for 20 years TA = 85°C 1,000 Times
Number of data flash rewrites
Notes 1,2,3
Retained for 1 years
TA = 25°C 1,000,000
Retained for 5 years TA = 85°C 100,000
Retained for 20 years TA = 85°C 10,000
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.The retaining years are until next rewrite
after the rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library.
3. These are the characteristics of the flash memory and the results obtained from reliability testing by
Renesas Electronics Corporation.
3.9 Dedicated Flash Memory Programmer Communication (UART)
(T
A = −40 to +105°C, 2.4 V ≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate During serial programming 115,200 1,000,000 bps