Datasheet

Section 26 Electrical Characteristics
R01UH0309EJ0500 Rev. 5.00 Page 1321 of 1408
Sep 24, 2012
H8S/2456, H8S/2456R, H8S/2454 Group
Table 26.28 USB PLL Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0V, EXTAL = 8 to 16 MHz
Item Symbol Min Max Unit Test Conditions
PLL for USB: oscillation
stabilization time
t
USOSC
1 ⎯ ms Figure 26.38
26.2.7 Flash Memory Characteristics
Table 26.29 Flash Memory Characteristics
Conditions: V
CC
= 3.0 to 3.6V, AV
CC
= 3.0 to 3.6V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
= 0V,
φ = 8 MHz to 33 MHz
Standard value
Item Applicable area
Min. Typ. Max. Unit
User ROM 1000*
2
⎯ ⎯ Programming and erase count*
1
Data flash area 10000*
2
⎯ ⎯
Times
User ROM ⎯ 150 4000 Programming time
(per 4 bytes)
Data flash area ⎯ 300 4000
μs
User ROM ⎯ 300 3000 Erase time (per 1 block)
Data flash area ⎯ 300 3000
ms
User ROM 3.0 Programming and erase voltage
Data flash area
⎯ 3.6 V
User ROM Read voltage
Data flash area
3.0 ⎯ 3.6 V
User ROM 1 ⎯ ⎯ Access state
Data flash area 2 ⎯ ⎯
State
Notes: 1. In the system where multiple programming are executed, erase once so as to effectively diminish
the programming times after having written with leaving the blank area as least as possible by
shifting writing address one by one.
For example, if 16 bytes per 1 set is being programmed, erase once after maximum 256 sets of
programming has been done, which diminish the effective programming times.
Keep the information of the times of erasure and set up the limitation times is recommended.
2. If an erase error is occurred, execute the clear status command -> erase command for at least 3
times until no erase error is occurred.