Datasheet

Section 25 Electrical Characteristics
Page 1240 of 1384 R01UH0310EJ0500 Rev. 5.00
Sep 25, 2012
H8S/2426, H8S/2426R, H8S/2424 Group
Item Symbol Min. Max. Unit Test Conditions
Counter address read data access time 4 t
AA4
2.5 × t
cyc
25 ns
Counter address read data access time 5 t
AA5
3.0 × t
cyc
25 ns
Counter address read data access time 6 t
AA6
4.0 × t
cyc
25 ns
Figures 25.8 to
25.23, 25.34 and
25.35
Multiplexed address delay time t
MAD
20 ns
Multiplexed address setup time 1 t
MAS1
0.5 × t
cyc
15 ns
Multiplexed address setup time 2 t
MAS2
1.5 × t
cyc
15 ns
Multiplexed address hold time t
MAH
1.0 × t
cyc
15 ns
AH delay time t
AHD
15 ns
Table 25.20 Bus Timing (2)
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
= 0 V,
φ = 8 MHz to 33 MHz
Item Symbol Min. Max. Unit Test Conditions
WR delay time 1 t
WRD1
15 ns
WR delay time 2 t
WRD2
15 ns
WR pulse width 1 t
WSW1
1.0 × t
cyc
13 ns
WR pulse width 2 t
WSW2
1.5 × t
cyc
13 ns
Figures 25.8 to
25.23, 25.34 and
25.35
Write data delay time t
WDD
23 ns
Write data setup time 1 t
WDS1
0.5 × t
cyc
15 ns
Write data setup time 2 t
WDS2
1.0 × t
cyc
15 ns
Write data setup time 3 t
WDS3
1.5 × t
cyc
15 ns
Write data hold time 1 t
WDH1
0.5 × t
cyc
13 ns
Write data hold time 2 t
WDH2
1.0 × t
cyc
13 ns
Write data hold time 3 t
WDH3
1.5 × t
cyc
13 ns
Write command setup time 1 t
WCS1
0.5 × t
cyc
10 ns
Write command setup time 2 t
WCS2
1.0 × t
cyc
10 ns
Write command hold time 1 t
WCH1
0.5 × t
cyc
10 ns
Write command hold time 2 t
WCH2
1.0 × t
cyc
10 ns
Read command setup time 1 t
RCS1
1.5 × t
cyc
10 ns
Read command setup time 2 t
RCS2
2.0 × t
cyc
10 ns
Read command hold time t
RCH
0.5 × t
cyc
10 ns
CAS delay time 1 t
CASD1
15 ns