Datasheet

Section 25 Electrical Characteristics
Page 1230 of 1384 R01UH0310EJ0500 Rev. 5.00
Sep 25, 2012
H8S/2426, H8S/2426R, H8S/2424 Group
25.1.5 D/A Conversion Characteristics
Table 25.12 D/A Conversion Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
= 0 V,
φ = 8 MHz to 33 MHz
Item Min. Typ. Max. Unit Test Conditions
Resolution 8 8 8 Bit
Conversion time ⎯ ⎯ 10 μs 20 pF capacitive load
Absolute accuracy ⎯ ±2.0 ±3.0 LSB 2 MΩ resistive load
⎯ ⎯ ±2.0 LSB 4 MΩ resistive load
25.1.6 Flash Memory Characteristics
Table 25.13 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
= 0 V,
φ = 8 MHz to 33 MHz
Standard value Unit
Item Applicable area Min. Typ. Max.
User ROM 1000*
2
⎯ ⎯ Programming and erase count*
1
Data flash area 10000*
2
⎯ ⎯
Times
User ROM ⎯ 150 4000 Programming time
(per 4 bytes)
Data flash area ⎯ 300 4000
μs
User ROM ⎯ 300 3000 Erase time (per 1 block)
Data flash area ⎯ 300 3000
ms
User ROM 3.0 Programming and erase voltage
Data flash area
⎯ 3.6 V
User ROM Read voltage
Data flash area
3.0 ⎯ 3.6 V
User ROM 1 ⎯ ⎯ Access state
Data flash area 2 ⎯ ⎯
State