Datasheet

Section 25 Electrical Characteristics
Page 1246 of 1384 R01UH0310EJ0500 Rev. 5.00
Sep 25, 2012
H8S/2426, H8S/2426R, H8S/2424 Group
25.2.6 Flash Memory Characteristics
Table 25.25 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
= 0 V,
φ = 8 MHz to 33 MHz
Standard value Unit
Item Applicable area Min. Typ. Max.
User ROM 1000*
2
⎯ ⎯ Programming and erase count*
1
Data flash area 10000*
2
⎯ ⎯
Times
User ROM ⎯ 150 4000 Programming time
(per 4 bytes)
Data flash area ⎯ 300 4000
μs
User ROM ⎯ 300 3000 Erase time (per 1 block)
Data flash area ⎯ 300 3000
ms
User ROM 3.0 Programming and erase voltage
Data flash area
⎯ 3.6 V
User ROM Read voltage
Data flash area
3.0 ⎯ 3.6 V
User ROM 1 ⎯ ⎯ Access state
Data flash area 2 ⎯ ⎯
State
Notes: 1. In the system where multiple programming are executed, erase once so as to effectively diminish
the programming times after having written with leaving the blank area as least as possible by
shifting writing address one by one.
For example, if 16 bytes per 1 set is being programmed, erase once after maximum 256 sets of
programming has been done, which diminish the effective programming times.
Keep the information of the times of erasure and set up the limitation times is recommended.
2. If an erase error is occurred, execute the clear status command -> erase command for at least 3
times until no erase error is occurred.
*1. Determination of the number of times the programming/erase operation.
Number of times the programming/erase performed in each block.
When the number of times the programming/erase is n times (n = 100), data can be erased n times
in each block.
For example, if 4 bytes programming is done 1024 times, each at a different address in a 4-kbyte
per block, and then the block is erased, number of times the programming/erase can be one time.
However, programming cannot be done multiple times in the block (overwriting is prohibited).
*2. Number of times that ensures all the electrical characteristics.