Datasheet

Section 21 Flash Memory
R01UH0310EJ0500 Rev. 5.00 Page 1077 of 1384
Sep 25, 2012
H8S/2426, H8S/2426R, H8S/2424 Group
Section 21 Flash Memory
The flash memory in this LSI can be accessed in three programming modes: user programming
mode, boot mode, and programmer mode.
Table 21.1 gives an overview of the flash memory specifications (refer to section 1, Overview, for
items that are not shown in table 21.1).
Table 21.1 Overview of Flash Memory Specifications
Item Description
Flash memory programming modes Three modes (user programming mode, boot mode,
and programmer mode)
User ROM Erase block division
Data flash
See figure 21.1.
Programming method Word units
Erase method Block units
Programming and erase control method Programming and erasure are controlled by
software commands
Commands Six commands
Programming and erase count 1,000 times/10,000 times*
1
*
2
Data retention Ten years
Notes: 1. The programming and erase count determine the number of times the erase operation
can be performed in each block.
For example, if 1-word programming is done 2,048 times, each at a different address in
a 4-Kbyte block and then the block is erased, this is counted as one erase count. If the
allowed programming and erase count are 1,000 times, each block can be erased
1,000 times.
2. 10,000 times for the data flash and 1,000 times for other blocks.