Datasheet

Rev. 3.00 Sep. 28, 2009 Page 704 of 710
REJ09B0384-0300
Item Page Revision (See Manual for Details)
24.2 DC Characteristics
Table 24.2 DC
Characteristics (1)
674 Table amended
Item
Schmitt
trigger
input
voltage
(1) V
T
-
V
T
+
V
T
+
- V
T
-
VVCC × 0.2
—
VCC × 0.05
—
VCC × 0.7
—
—
—
—
—
—
—
DB7 to DB4, ExDB7 to ExDB0,
EVENT7 to EVENT0,
(Ex)IRQ15, (Ex)IRQ14,
ExIRQ13, ExIRQ12,
(Ex)IRQ11, (Ex)IRQ10,
ExIRQ9, ExIRQ8, (Ex)IRQ7 to
(Ex)IRQ0, ETRST, XTAL,
EXCL, ADTRG
Input
high
voltage
(2) V
IH
VVCC × 0.9
VCC × 0.7
2.2
—
VCC × 0.5
2.0
2.2
VCC + 0.3
VCC + 0.3
AVCC + 0.3
5.5
VCC + 0.3
VCC + 0.3
VCC + 0.3
—
—
—
—
—
—
—
RES, STBY, NMI, FWE, MD2,
MD1
EXTAL
Port 7
SCL3 to SCL0, SDA3 to SDA0,
Port 80 to 83, C0 to C3
SERIRQ, LAD3 to LAD0,
LCLK, LRESET, LFRAME
Input pins other than (1) and (2)
above
V
T
-
V
T
+
V
T
+
- V
T
-
VCC × 0.3
—
VCC × 0.05
—
VCC × 0.7
—
SCL3 to SCL0, SDA3 to SDA0
Symbol Min. Typ. Max.
Unit
24.5 Flash Memory
Characteristics
Table 24.13 Flash
Memory Characteristics
(100 Programming/
Erasing Cycles
Specification)
694 Title and Table amended
Item Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time
(total)*
1
*
2
*
4
Σ t
P
— 4.5 12 s/512 Kbytes Ta = 25°C
Programming and
Erase time (total)*
1
*
2
*
4
Σ t
PE
— 9.0 24 s/512 Kbytes
Reprogramming
count*
5
N
WEC
100*
3
1000 — Times
Data retention time*
4
T
DRP
10 — — Years
Ta = 25°C
Erase time (total)*
1
*
2
*
4
Σ t
E
— 4.5 12 s/512 Kbytes Ta = 25°C
Table 24.14 Flash
Memory Characteristics
(1,000 Programming/
Erasing Cycles
Specification)
695 Newly added
B. Product Lineup 698 Table amended
R4F2153
Product Type Type Code Mark Code Package (Code)
R4F2153 F2153VBR25KDVF-ZTAT version PLBG0112GA-A