Datasheet

Section 24 Electrical Characteristics
Rev. 3.00 Sep. 28, 2009 Page 695 of 710
REJ09B0384-0300
Table 24.14 Flash Memory Characteristics (1,000 Programming/Erasing Cycles
Specification)
Condition: VCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Avref = 3.0 V to AVCC, VSS = AVSS
= 0 V
Ta = 0°C to +75°C (operating temperature range for programming/erasing)
Item Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time*
1
*
2
*
4
t
P
⎯ 1 20 ms/128 bytes
Erase time*
1
*
2
*
4
t
E
⎯ 40 260 ms/4-Kbyte block
⎯ 300 1500 ms/32-Kbyte block
⎯ 600 3000 ms/64-Kbyte block
Programming time
(total)*
1
*
2
*
4
Σ t
P
⎯ 4.5 24 s/512 Kbytes Ta = 25°C
Erase time (total)*
1
*
2
*
4
Σ t
E
⎯ 4.5 24 s/512 Kbytes Ta = 25°C
Programming and
Erase time (total)*
1
*
2
*
4
Σ t
PE
⎯ 9.0 48 s/512 Kbytes Ta = 25°C
Reprogramming
count*
5
N
WEC
1000*
3
⎯ ⎯ Times
Data retention time*
4
t
DRP
10 ⎯ ⎯ Years
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3. This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges from
1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
5. Reprogramming count in each erase block.