Datasheet

Section 28 Electrical Characteristics
Page 936 of 982 REJ09B0465-0300 Rev. 3.00
Sep 17, 2010
H8S/20103, H8S/20203, H8S/20223, H8S/20115, H8S/20215, H8S
/
20235 Group
Values
Item Symbol
Test
Conditions
Target Area Min. Typ. Max. Unit
Programmable
ROM
Read voltage
Data Flash
2.7 ⎯ 5.5 V
Programmable
ROM
1 ⎯ ⎯ Access states
Data Flash 2 ⎯ ⎯
t
bcyc
Programmable
ROM
0 ⎯ 60 Program/erase temperature
Data Flash −20*
3
⎯ 85
°C
Notes: 1. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1000, 10000), each block can be
erased n times.
For example, if 1024 4-byte writes are performed to different addresses in data flash A,
a 4-Kbyte block, and then the block is erased, the programming/erasure endurance still
stands at one.
However, the same address must not be programmed more than once per erase
operation (overwriting prohibited).
2. Endurance to guarantee all electrical characteristics after program and erase (1 to Min.
value can be guaranteed).
3. −40°C for D version.