Datasheet

Section 7 ROM
Page 222 of 982 REJ09B0465-0300 Rev. 3.00
Sep 17, 2010
H8S/20103, H8S/20203, H8S/20223, H8S/20115, H8S/20215, H8S/20235 Group
(6) Read-Array Command
A read-array command is to cause a transition to a mode in which data can be read from flash
memory.
When H'FF is written in the first command cycle, a transition to read array mode is caused. When
the specified addresses are read out in the subsequent command cycles, data is read from the
specified addresses.
Since read-array mode is retained until any other command is written, multiple addresses can be
read successively.
(7) Lock-Bit Reading Command
This command is used to read the value of the lock bit in flash memory.
Writing H'71 in the first command cycle and reading from the specifying block address (BA) in
the second command cycle returns the value of the lock bit. If a word instruction is used for
reading, the value of the lock bit will be reflected in bits 6 and 14 of the read-out word. If a byte
instruction is used, the value of the lock bit will be reflected in bit 6. Execute the lock-bit reading
command in EW0 mode.
(8) Status Clearing Command
A clear-status command is used to clear the status flag to 0.
When H'50 is written in the first command cycle, the FMPRSF and FMEBSF bits in FLMSTR are
cleared to 0.
(9) Full Status Checking
When any command (other than the read-array command, lock bit reading command and clear-
status command) is issued, full-status checking is performed to confirm whether or not there was
an error.
When an error occurs, the FMPRSF and FMEBSF bits in FLMSTR are set to 1, indicating the
occurrence of the relevant errors.
Table 7.12 shows the bit values in FLMSTR and the corresponding errors. Figure 7.19 shows the
full status checking flowchart and procedures of handling each error.