Datasheet

Section 28 Electrical Characteristics
REJ09B0465-0300 Rev. 3.00 Page 935 of 982
Sep 17, 2010
H8S/20103, H8S/20203, H8S/20223, H8S/20115, H8S/20215, H8S/20235 Group
28.7 Flash Memory Characteristics
Table 28.10 Flash Memory Characteristics
V
CC
= 2.7 to 5.5 V, V
SS
= 0.0 V, VCC ≥ AVCC, Ta = −20 to +85 °C (N version)/
−40 to +85 °C (D version), unless otherwise indicated.
Values
Item Symbol
Test
Conditions
Target Area Min. Typ. Max. Unit
Programmable
ROM
1000*
2
⎯ ⎯ Program/erase endurance*
1
Data Flash 10000*
2
⎯ ⎯
Times
Programmable
ROM
⎯ 150 3000 Program time (per 4 bytes)
Data Flash ⎯ 300 3000
μs
Lock-bit program time Programmable
ROM
⎯ 70 3000 μs
Programmable
ROM
⎯ 300 3000 Erase time (per 1-block)
Data Flash ⎯ 300 3000
ms
Programmable
ROM
Transition time to erase-
suspend mode
t
d(SR-ES)
Data Flash
⎯ ⎯ 3t
bcyc
+ 50 μs
Programmable
ROM
Interval between start of
erasure and request for
suspension
Data Flash
0 ⎯ ⎯ μs
Programmable
ROM
Interval between restart of
erasure and next request for
suspension
Data Flash
150 ⎯ ⎯ μs
Programmable
ROM
Interval between suspension
and restart of erasure
Data Flash
⎯ ⎯ 50 μs
Programmable
ROM
Program/erase voltage
Data Flash
2.7 ⎯ 5.5 V