Datasheet

©2008. Renesas Technology Corp., All rights reserved.
6
Rev.1.00 Date: Aug.04.08
REJ99B2001-0100
3804L Group 3804H Group 3804 Group
Flash Memory ver.
Flash memory
60K/2K
SP, HP, KP, WG
2.7 to 5.5 V
Addresses FFD4 to FFDAh
Address FFDBh
Flash Memory control registers 0 to 2
Addresses 0FE0h to 0FE2h
Single power source
(Vcc = 2.7 to 5.5 V)
CPU Rewrite Mode
Parallel I/O Mode
Standard serial I/O Mode
Time until Flash Memory can
Operate after Returning from Stop
Mode
Needed: 100 μsec Needed: 100 μsec
Not needed Not needed
Power Source Circuit Characteristics
Internal Power Source Stable Time
at Power-on
: td (P-R)
Needed Needed
Not needed Not needed
Electrical Characteristics
Recommended Operating
Conditions
The power source current of the Flash memory version differs between the Groups. Also, the operating conditions differs according to different
operating voltages.
For details, refer to the corresponding datasheet.
Mask ROM ver. Flash Memory ver.
Mask ROM Flash memory
60K/2K
SP, FP, HP
4.0 to 5.5V
–
–
Flash Memory control register
Address 0FFEh
Flash command register
Address 0FFFh
Program/Erase
Power Source
Single power source
(Vcc = 2.7 to 5.5 V)
– Dual power source
(Vcc = 5 V ± 0.5 V, Vpp = 11.7 to
12.6 V)
Program/Erase Mode
CPU Rewrite Mode
Parallel I/O Mode
Standard serial I/O Mode
–
CPU Rewrite Mode
Parallel I/O Mode
Standard serial I/O Mode
16K/640, 24K/1K, 32K/1K,
48K/2K, 60K/2K
SP, FP, HP
2.7 to 5.5 V
–
–
–
Flash Memory ver.
Program Memory Flash memory
Program Memory/RAM size
60K/2K
Package SP, FP, HP, KP
Operating Power Source Voltage
2.7 to 5.5V
Flash Memory ID Code
Addresses FFD4 to FFDAh
Flash Memory ROM Code Protect Address FFDBh
Flash Memory Control Register
Flash Memory control registers 0 to 2
Addresses 0FE0h to 0FE2h
Differences Between 3804L/3804H/3804 Groups
Differences Between 3804L/3804H/3804 Groups