Datasheet

M32C/87 Group (M32C/87, M32C/87A, M32C/87B) 5. Electrical Characteristics
REJ03B0127-0151 Rev.1.51 Jul 31, 2008
Page 55 of 85
Table 5.10 Flash Memory Electrical Characteristics (VCC1 = 4.5 V to 5.5 V, 3.0 to 3.6 V,
Topr = 0 to 60°C unless otherwise specified)
NOTE:
1. If erase and program endurance is n times (n = 100), each block can be erased n times. For example, if a 4-
Kbyte block A is erased after programming a word data 2,048 times, each to a different address, this counts as
one erase and program time. Data can not be programmed to the same address more than once without
erasing the block. (rewrite prohibited)
Symbol Parameter Measurement Condition
Standard
Unit
Min. Typ. Max.
− Erase and program endurance
(1)
100 times
− Word program time (16 bits) (VCC1 = 5.0 V, Topr = 25°C) 25 300 μs
− Lock bit program time 25 300 μs
− Block erase time
(VCC1 = 5.0 V, Topr = 25°C)
4-Kbyte block 0.3 4 s
8-Kbyte block 0.3 4 s
32-Kbyte block 0.5 4 s
64-Kbyte block 0.8 4 s
tps Wait time to stabilize flash memory circuit 15 μs
− Data hold time (Topr = -40 to 85°C) 10 years
VCC1 = VCC2 = 5V