Datasheet

M16C/6S Group Electrical Characteristics
R01DS0201EJ0502 Rev.5.02 page 151 of 203
Dec 25, 2012
Table 1.19.3. Flash Memory Version Electrical Characteristics (Note 1)
Word program time (Vcc=3.3V, Topr=25°C)
Block erase time
75
600 µs
Parameter
Standard
Min. Typ.
(Note 2)
Max
Unit
Symbol
–
–
0.4 9
s
0.7
9s
9s
1.2
8Kbyte block
16Kbyte block
32Kbyte block
–
Erase/Write cycle (Note 3)
cycle
–Data retention time (Note 5)
year
20
t
PS
Flash Memory Circuit Stabilization Wait Time
µs
15
100 (Note 4)
Table 1.19.4. Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at Topr = 0 to 60
o
C)
Flash program, erase voltage Flash read operation voltage
V
CC = 3.3 V ± 0.3 V V CC = 3.0 to 3.6 V
Note 1: When not otherwise specified, Vcc = 3.0 to 3.6V; Topr = 0 to 60 °C.
Note 2: VCC = 3.3V; Topr = 25 °C.
Note 3: Program and Erase Endurance refers to the number of times a block erase can be performed. If the program and erase endurance is n (n=100),
each block can be erased n times. For example, if a 8Kbytes block 0 is erased after writing 1 word data 4096 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block. (Rewrite prohibited)
Note 4: Maximum number of E/W cycles for which opration is guaranteed.
Note 5: Topr = 55°C.
Note 6: Customers desiring E/W failure rate information should contact their Renesas technical support representative.