Datasheet
Table Of Contents
- Notes regarding these materials
- General Precautions in the Handling of MPU/MCU Products
- How to Use This Manual
- Table of Contents
- Quick Reference by Address B-
- 1. Overview
- 2. Central Processing Unit (CPU)
- 2.1 Data Registers (R0, R1, R2 and R3)
- 2.2 Address Registers (A0 and A1)
- 2.3 Frame Base Register (FB)
- 2.4 Interrupt Table Register (INTB)
- 2.5 Program Counter (PC)
- 2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
- 2.7 Static Base Register (SB)
- 2.8 Flag Register (FLG)
- 2.8.1 Carry Flag (C Flag)
- 2.8.2 Debug Flag (D Flag)
- 2.8.3 Zero Flag (Z Flag)
- 2.8.4 Sign Flag (S Flag)
- 2.8.5 Register Bank Select Flag (B Flag)
- 2.8.6 Overflow Flag (O Flag)
- 2.8.7 Interrupt Enable Flag (I Flag)
- 2.8.8 Stack Pointer Select Flag (U Flag)
- 2.8.9 Processor Interrupt Priority Level (IPL)
- 2.8.10 Reserved Area
- 3. Memory
- 4. Special Function Registers (SFRs)
- 5. Reset
- 6. Processor Mode
- 7. Clock Generation Circuit
- 8. Protection
- 9. Interrupt
- 10. Watchdog Timer
- 11. DMAC
- 12. Timer
- 13. Serial I/O
- 14. A/D Converter
- 15. CRC Calculation Circuit
- 16. Programmable I/O Ports
- 16.1 Port Pi Direction Register (PDi Register, i = 1, 6 to 10)
- 16.2 Port Pi Register (Pi Register, i = 1, 6 to 10)
- 16.3 Pull-up Control Register 0 to Pull-up Control Register 2 (PUR0 to PUR2 Registers)
- 16.4 Port Control Register
- 16.5 Pin Assignment Control register (PACR)
- 16.6 Digital Debounce function
- 17. Flash Memory Version
- 17.1 Flash Memory Performance
- 17.2 Memory Map
- 17.3 Functions To Prevent Flash Memory from Rewriting
- 17.4 CPU Rewrite Mode
- 17.5 Register Description
- 17.6 Precautions in CPU Rewrite Mode
- 17.6.1 Operation Speed
- 17.6.2 Prohibited Instructions
- 17.6.3 Interrupts
- 17.6.4 How to Access
- 17.6.5 Writing in the User ROM Space
- 17.6.6 DMA Transfer
- 17.6.7 Writing Command and Data
- 17.6.8 Wait Mode
- 17.6.9 Stop Mode
- 17.6.10 Low Power Consumption Mode and On-chip Oscillator-Low Power Consumption Mode
- 17.7 Software Commands
- 17.8 Status Register
- 17.9 Standard Serial I/O Mode
- 17.10 Parallel I/O Mode
- 18. Electrical Characteristics
- 19. Usage Notes
- 19.1 SFR
- 19.2 PLL Frequency Synthesizer
- 19.3 Power Control
- 19.4 Protect
- 19.5 Interrupts
- 19.6 DMAC
- 19.7 Timer
- 19.8 Serial I/O
- 19.9 A/D Converter
- 19.10 Programmable I/O Ports
- 19.11 Electric Characteristic Differences Between Mask ROM
- 19.12 Mask ROM Version
- 19.13 Flash Memory Version
- 19.13.1 Functions to Inhibit Rewriting Flash Memory
- 19.13.2 Stop mode
- 19.13.3 Wait mode
- 19.13.4 Low power dissipation mode, on-chip oscillator low power dissipation mode
- 19.13.5 Writing command and data
- 19.13.6 Program Command
- 19.13.7 Operation speed
- 19.13.8 Instructions prohibited in EW0 Mode
- 19.13.9 Interrupts
- 19.13.10 How to access
- 19.13.11 Writing in the user ROM area
- 19.13.12 DMA transfer
- 19.13.13 Regarding Programming/Erasure Times and Execution Time
- 19.13.14 Definition of Programming/Erasure Times
- 19.13.15 Flash Memory Version Electrical Characteristics 10,000 E/W cycle product
- 19.13.16 Boot Mode
- 19.14 Noise
- 19.15 Instruction for a Device Use
- Appendix 1. Package Dimensions
- Appendix 2. Functional Difference
- Register Index
- REVISION HISTORY
page 322
19. Usage Notes
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19.13.14 Definition of Programming/Erasure Times
"Number of programs and erasure" refers to the number of erasure per block.
If the number of program and erasure is n (n=100 1,000 10,000) each block can be erased n times.
For example, if a 2K byte block A is erased after writing 1 word data 1024 times, each to a different
address, this is counted as one program and erasure. However, data cannot be written to the same
adrress more than once without erasing the block. (Rewrite prohibited)
19.13.15
Flash Memory Version Electrical Characteristics 10,000 E/W cycle products (U7, U9)
When Block A or B E/W cycles exceed 100, select one wait state per block access. When FMR17 is set
to "1", one wait state is inserted per access to Block A or B - regardless of the value of PM17. Wait state
insertion during access to all other blocks, as well as to internal RAM, is controlled by PM17 - regardless
of the setting of FMR17.
To use the limited number of erasure efficiently, write to unused address within the block instead of
rewite. Erase block only after all possible address are used. For example, an 8-word program can be
written 128 times before erase becomes necessary.
Maintaining an equal number of erasure between Block A and B will also improve efficiency.
We recommend keeping track of the number of times erasure is used.
19.13.16 Boot Mode
An indeterminate value is sometimes output in the I/O port until the internal power supply becomes stable
_____________
when "H" is applied to the CNVSS pin and "L" is applied to the RESET pin.
When setting the CNVSS pin to "H", the following procedure is required:
____________
(1) Apply an "L" signal to the RESET pin and the CNVSS pin.
(2) Bring VCC to more than 2.7V, and wait at least 2msec.
(Internal power supply stable waiting time)
(3) Apply an "H" signal to the CNVSS pin.
____________
(4) Apply an "H" signal to the RESET pin.
When the CNVSS pin is “H” and RESET pin is “L”, P67 pin is connected to the pull-up resister.