Datasheet
Table Of Contents
- Notes regarding these materials
- General Precautions in the Handling of MPU/MCU Products
- How to Use This Manual
- Table of Contents
- Quick Reference by Address B-
- 1. Overview
- 2. Central Processing Unit (CPU)
- 2.1 Data Registers (R0, R1, R2 and R3)
- 2.2 Address Registers (A0 and A1)
- 2.3 Frame Base Register (FB)
- 2.4 Interrupt Table Register (INTB)
- 2.5 Program Counter (PC)
- 2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
- 2.7 Static Base Register (SB)
- 2.8 Flag Register (FLG)
- 2.8.1 Carry Flag (C Flag)
- 2.8.2 Debug Flag (D Flag)
- 2.8.3 Zero Flag (Z Flag)
- 2.8.4 Sign Flag (S Flag)
- 2.8.5 Register Bank Select Flag (B Flag)
- 2.8.6 Overflow Flag (O Flag)
- 2.8.7 Interrupt Enable Flag (I Flag)
- 2.8.8 Stack Pointer Select Flag (U Flag)
- 2.8.9 Processor Interrupt Priority Level (IPL)
- 2.8.10 Reserved Area
- 3. Memory
- 4. Special Function Registers (SFRs)
- 5. Reset
- 6. Processor Mode
- 7. Clock Generation Circuit
- 8. Protection
- 9. Interrupt
- 10. Watchdog Timer
- 11. DMAC
- 12. Timer
- 13. Serial I/O
- 14. A/D Converter
- 15. CRC Calculation Circuit
- 16. Programmable I/O Ports
- 16.1 Port Pi Direction Register (PDi Register, i = 1, 6 to 10)
- 16.2 Port Pi Register (Pi Register, i = 1, 6 to 10)
- 16.3 Pull-up Control Register 0 to Pull-up Control Register 2 (PUR0 to PUR2 Registers)
- 16.4 Port Control Register
- 16.5 Pin Assignment Control register (PACR)
- 16.6 Digital Debounce function
- 17. Flash Memory Version
- 17.1 Flash Memory Performance
- 17.2 Memory Map
- 17.3 Functions To Prevent Flash Memory from Rewriting
- 17.4 CPU Rewrite Mode
- 17.5 Register Description
- 17.6 Precautions in CPU Rewrite Mode
- 17.6.1 Operation Speed
- 17.6.2 Prohibited Instructions
- 17.6.3 Interrupts
- 17.6.4 How to Access
- 17.6.5 Writing in the User ROM Space
- 17.6.6 DMA Transfer
- 17.6.7 Writing Command and Data
- 17.6.8 Wait Mode
- 17.6.9 Stop Mode
- 17.6.10 Low Power Consumption Mode and On-chip Oscillator-Low Power Consumption Mode
- 17.7 Software Commands
- 17.8 Status Register
- 17.9 Standard Serial I/O Mode
- 17.10 Parallel I/O Mode
- 18. Electrical Characteristics
- 19. Usage Notes
- 19.1 SFR
- 19.2 PLL Frequency Synthesizer
- 19.3 Power Control
- 19.4 Protect
- 19.5 Interrupts
- 19.6 DMAC
- 19.7 Timer
- 19.8 Serial I/O
- 19.9 A/D Converter
- 19.10 Programmable I/O Ports
- 19.11 Electric Characteristic Differences Between Mask ROM
- 19.12 Mask ROM Version
- 19.13 Flash Memory Version
- 19.13.1 Functions to Inhibit Rewriting Flash Memory
- 19.13.2 Stop mode
- 19.13.3 Wait mode
- 19.13.4 Low power dissipation mode, on-chip oscillator low power dissipation mode
- 19.13.5 Writing command and data
- 19.13.6 Program Command
- 19.13.7 Operation speed
- 19.13.8 Instructions prohibited in EW0 Mode
- 19.13.9 Interrupts
- 19.13.10 How to access
- 19.13.11 Writing in the user ROM area
- 19.13.12 DMA transfer
- 19.13.13 Regarding Programming/Erasure Times and Execution Time
- 19.13.14 Definition of Programming/Erasure Times
- 19.13.15 Flash Memory Version Electrical Characteristics 10,000 E/W cycle product
- 19.13.16 Boot Mode
- 19.14 Noise
- 19.15 Instruction for a Device Use
- Appendix 1. Package Dimensions
- Appendix 2. Functional Difference
- Register Index
- REVISION HISTORY

17. Flash Memory Version
page 252
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17.8.4 Full Status Check
When an error occurs, the FMR06 to FMR07 bits in the FMR0 register are set to “1”, indicating occur-
rence of each specific error. Therefore, execution results can be verified by checking these status bits
(full status check). Table 17.8.4.1 shows errors and the status of FMR0 register. Figure 17.8.4.1
shows a flow chart of the full status check and handling procedure for each error.
Table 17.8.4.1. Errors and FMR0 Register Status
FMR0 register
(SRD register)
status Error Error occurrence condition
FMR07 FMR06
(SR5) (SR4)
1 1 Command • When any commands are not written correctly
sequence error • A value other than ‘xxD016’ or ‘xxFF16’ is written in the second
bus cycle of the block erase command
(1)
• When the block erase command is executed on protected blocks
• When the program command is executed on protected blocks
1 0 Erase error • When the block erase command is executed on unprotected
blocks but the blocks are not automatically erased correctly
0 1 Program error • When the program command is executed on unprotected blocks
but the blocks are not automatically programmed correctly.
NOTE:
1. The flash memory enters read array mode by writing command code ‘xxFF16’ in the second bus
cycle of these commands. The command code written in the first bus cycle becomes invalid.