Datasheet
Table Of Contents
- Notes regarding these materials
- General Precautions in the Handling of MPU/MCU Products
- How to Use This Manual
- Table of Contents
- Quick Reference by Address B-
- 1. Overview
- 2. Central Processing Unit (CPU)
- 2.1 Data Registers (R0, R1, R2 and R3)
- 2.2 Address Registers (A0 and A1)
- 2.3 Frame Base Register (FB)
- 2.4 Interrupt Table Register (INTB)
- 2.5 Program Counter (PC)
- 2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
- 2.7 Static Base Register (SB)
- 2.8 Flag Register (FLG)
- 2.8.1 Carry Flag (C Flag)
- 2.8.2 Debug Flag (D Flag)
- 2.8.3 Zero Flag (Z Flag)
- 2.8.4 Sign Flag (S Flag)
- 2.8.5 Register Bank Select Flag (B Flag)
- 2.8.6 Overflow Flag (O Flag)
- 2.8.7 Interrupt Enable Flag (I Flag)
- 2.8.8 Stack Pointer Select Flag (U Flag)
- 2.8.9 Processor Interrupt Priority Level (IPL)
- 2.8.10 Reserved Area
- 3. Memory
- 4. Special Function Registers (SFRs)
- 5. Reset
- 6. Processor Mode
- 7. Clock Generation Circuit
- 8. Protection
- 9. Interrupt
- 10. Watchdog Timer
- 11. DMAC
- 12. Timer
- 13. Serial I/O
- 14. A/D Converter
- 15. CRC Calculation Circuit
- 16. Programmable I/O Ports
- 16.1 Port Pi Direction Register (PDi Register, i = 1, 6 to 10)
- 16.2 Port Pi Register (Pi Register, i = 1, 6 to 10)
- 16.3 Pull-up Control Register 0 to Pull-up Control Register 2 (PUR0 to PUR2 Registers)
- 16.4 Port Control Register
- 16.5 Pin Assignment Control register (PACR)
- 16.6 Digital Debounce function
- 17. Flash Memory Version
- 17.1 Flash Memory Performance
- 17.2 Memory Map
- 17.3 Functions To Prevent Flash Memory from Rewriting
- 17.4 CPU Rewrite Mode
- 17.5 Register Description
- 17.6 Precautions in CPU Rewrite Mode
- 17.6.1 Operation Speed
- 17.6.2 Prohibited Instructions
- 17.6.3 Interrupts
- 17.6.4 How to Access
- 17.6.5 Writing in the User ROM Space
- 17.6.6 DMA Transfer
- 17.6.7 Writing Command and Data
- 17.6.8 Wait Mode
- 17.6.9 Stop Mode
- 17.6.10 Low Power Consumption Mode and On-chip Oscillator-Low Power Consumption Mode
- 17.7 Software Commands
- 17.8 Status Register
- 17.9 Standard Serial I/O Mode
- 17.10 Parallel I/O Mode
- 18. Electrical Characteristics
- 19. Usage Notes
- 19.1 SFR
- 19.2 PLL Frequency Synthesizer
- 19.3 Power Control
- 19.4 Protect
- 19.5 Interrupts
- 19.6 DMAC
- 19.7 Timer
- 19.8 Serial I/O
- 19.9 A/D Converter
- 19.10 Programmable I/O Ports
- 19.11 Electric Characteristic Differences Between Mask ROM
- 19.12 Mask ROM Version
- 19.13 Flash Memory Version
- 19.13.1 Functions to Inhibit Rewriting Flash Memory
- 19.13.2 Stop mode
- 19.13.3 Wait mode
- 19.13.4 Low power dissipation mode, on-chip oscillator low power dissipation mode
- 19.13.5 Writing command and data
- 19.13.6 Program Command
- 19.13.7 Operation speed
- 19.13.8 Instructions prohibited in EW0 Mode
- 19.13.9 Interrupts
- 19.13.10 How to access
- 19.13.11 Writing in the user ROM area
- 19.13.12 DMA transfer
- 19.13.13 Regarding Programming/Erasure Times and Execution Time
- 19.13.14 Definition of Programming/Erasure Times
- 19.13.15 Flash Memory Version Electrical Characteristics 10,000 E/W cycle product
- 19.13.16 Boot Mode
- 19.14 Noise
- 19.15 Instruction for a Device Use
- Appendix 1. Package Dimensions
- Appendix 2. Functional Difference
- Register Index
- REVISION HISTORY
17. Flash Memory Version
page 249
923fo7002,51.beF00.2.veR
0020-2020B90JER
)T62/C61M,B62/C61M,A62/C61M(puorGA62/C61M
Write ‘xxD0
16
’ to the highest-order
block address
(1)
Start
Block erase completed
YES
NO
Write command code ‘xx20
16
’
(1)
FMR00=1?
Full status check
(2,3)
NOTES:
1. Write the command code and data at even address.
2. Refer to "Figure 17.8.4.1. Full Status Check and Handling Porcedure for Each Error".
3. Execute the clear status register command and block erase command at least 3 times until an erase error is
not generated when an erase error is generated.
Figure 17.7.5.1. Flow Chart of Block Erase Command (when not using erase suspend function)
17.7.5 Block Erase
By writing ‘xx2016’ in the first bus cycle and ‘xxD016’ in the second bus cycle to the highest-order (even
addresse of a block) and the auto-programming/erasing (erase and erase verify) start. The FMR00 bit
in the FMR0 register indicates whether the auto-programming operation has been completed. The
FMR00 bit is set to “0” (busy) during the auto-erasing operation and “1” (ready) when the auto-erasing
operation is completed. When using the erase-suspend function in EW0 mode, the FMR46 bit in the
FMR4 register indicates whether a flash memory has entered erase-suspend mode. The FMR46 bit is
set to “0” during auto-erasing operation and “1” when the auto-erasing operation is completed (enter-
ing erase-suspend). After the completion of an auto-erasing operation, the FMR07 bit in the FMR0
register indicates whether or not the auto erasing-operation has been completed as expected. (Refer
to 17.8.4 Full Status Check). Also, each block disables erasing. (Refer to “Table 17.5.2.1”). Figure
17.7.5.1 shows a flow chart of the block erase command programming when not using the erase-
suspend function. Figure 17.7.5.2 shows a flow chart of the block erase command programming when
using an erase-suspend function. In EW1 mode, do not execute this command on the block where the
rewrite control program is allocated. In EW0 mode, the microcomputer enters read status register
mode as soon as the auto-erasing operation starts and the status register can be read. The SR7 bit in
the status register is set to “0” as soon as the auto-erasing operation starts. This bit is set to “1” when
the auto-erasing operation is completed. The microcomputer remains in read status register mode
until the read array command is written. Also excute the clear status register command and block
erase command at least 3 times until an erase error is not generated when an erase error is gener-
ated.