High Frequency Medium Power Amplifier Specifications

ManualsBrandsRenesas ManualsAmplifierHSG2005

Rev.4.00 Jun 21, 2006 page 1 of 12

HSG2005

SiGe HBT

High Frequency Medium Power Amplifier

REJ03G0485-0400

Rev.4.00

Jun 21, 2006

Features

• High Transition Frequency

= 28.5 GHz typ.

• Low Distortion and Excellent Linearity

P1dB at output = +21 dBm typ. f = 5.8 GHz

• High Collector to Emitter Voltage

CEO

= 5 V

• Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.

Outline

Renesas Package code: PWQN0008ZA-A

(Package name: HWQFN-8 <TNP-8TV>)

1. Collecto

2. Collecto

3. Collecto

4. Emitter

5. Emitter

6. Base

7. Emitter

8. Emitter

9. Emitter

2005

Note: Marking is “2005”.

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V

CBO

12 V

Collector to emitter voltage V

CEO

5 V

Emitter to base voltage V

EBO

1.2 V

Collector current I

400 mA

Collector power dissipation Pc 1.2

Note

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Note: Value on PCB (40 x 40 x 1.0 mm)

Summary of content (13 pages)

PAGE 1
HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +21 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A (Package name: HWQFN-8 ) 5 7 6 200 8 Note: 9 9 5 4 4 3 3 1 2 2 1 5 6 7 8 1.
PAGE 2
HSG2005 Electrical Characteristics (Ta = 25°C) Item DC current transfer ratio Symbol hFE Min 150 Typ 220 Max 300 Unit  Cre   0.4 pF Transition Frequency fT  28.5  GHz VCE = 3 V, IC = 100 mA, f = 1 GHz Maximum Stable Gain MSG 10.5 12.5  dB VCE = 3 V, IC = 100 mA, f = 5.8 GHz Maximum Available Gain MAG  17.0  dB VCE = 3 V, IC = 100 mA, f = 2.4 GHz Maximum Available Gain MAG  9.0  dB VCE = 3 V, IC = 100 mA, f = 5.8 GHz PG  8.0  dB VCE = 3.
PAGE 3
HSG2005 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics DC Current Transfer Ratio hFE (-) VCE = 3 V 80 60 40 20 0 0.2 0.4 0.6 0.8 Reverse Transfer Capacitanse Cre (pF) Base to Emitter Voltage 300 VCE = 3 V 200 100 1.0 VBE (V) 100 1000 IC (mA) Transition Frequency vs. Collector Current 1.0 40 IE = 0 f = 1 MHz 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 f = 1 GHz 20 1.8 GHz 15 2.4 GHz 10 5.2 GHz 5.8 GHz 5 1 10 Collector Current Rev.4.
PAGE 4
HSG2005 2.4 GHz Characteristics Evaluation Board Circuit VCC VBB : Bias Control *1 µF 1000 pF 1000 pF 10 pF 10 pF *1 µF 27 Ω L : 10 nH L : 5.6 nH C : 1 pF OUT C : 1 pF L : 1.8 nH IN C : 0.9 pF L : 1.5 nH C : 1 to 2 pF Pin - Pout Characteristics 3rd. Order Intermodulation Distortion (IMD3) Pin - Pout Characteristics Pout 20 PG 15 400 40 350 30 300 20 250 10 200 5 150 Iop 0 100 -5 50 -10 -20 0 -10 Pout / IMD3 (dBm) 25 VCC = 3.6 V Iidle = 50 mA f = 2.
PAGE 5
HSG2005 5.8 GHz Characteristics Evaluation Board Circuit VCC VBB : Bias Control *1 µF 1000 pF 27 Ω *1 µF 1000 pF 10 pF 10 pF 2 pF 2 pF 0.5 pF OUT 0.2 pF IN 0.4 pF 0.5 pF Pin - Pout Characteristics Pin - Pout Characteristics 3rd. Order Intermodulation Distortion (IMD3) 40 250 Pout VCC = 3.6 V Iidle = 100 mA f = 5.8 GHz 200 Iop 15 150 10 100 PG 5 Pout / IMD3 (dBm) 20 VCE = 3.6 V Iidle = 100 mA f = 5.
PAGE 6
HSG2005 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 20 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -3 -.4 -30° -150° -2 -.6 -.8 -1 -90° Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.
PAGE 7
HSG2005 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 20 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -3 -.4 -30° -150° -2 -.6 -.8 -1 -90° Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.
PAGE 8
HSG2005 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 20 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -3 -.4 -30° -150° -2 -.6 -.8 -1 -90° Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.
PAGE 9
HSG2005 S parameter (VCE = 3 V, IC = 100 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -139.8 -160.8 -169.2 -174.5 -178.1 179.0 176.6 174.2 171.9 169.8 168.1 166.5 164.8 163.1 161.2 159.5 MAG 0.0084 0.0106 0.0107 0.0127 0.0129 0.0139 0.0155 0.0163 0.0176 0.0191 0.0201 0.0214 0.0230 0.0244 0.0257 0.0275 S12 ANG (deg.) 45.8 28.1 33.1 39.8 39.0 41.5 42.8 48.0 49.1 50.1 51.0 51.7 52.7 53.8 53.0 54.4 MAG 0.682 0.598 0.566 0.559 0.559 0.560 0.560 0.561 0.563 0.565 0.567 0.568 0.570 0.572 0.573 0.576 S22 ANG (deg.
PAGE 10
HSG2005 S parameter (VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -140.9 -160.6 -168.9 -174.3 -178.0 179.2 176.7 174.3 172.0 170.0 168.2 166.6 164.9 163.1 161.3 159.6 MAG 0.0127 0.0091 0.0110 0.0128 0.0135 0.0140 0.0157 0.0169 0.0177 0.0191 0.0204 0.0211 0.0228 0.0247 0.0252 0.0268 S12 ANG (deg.) 40.9 37.0 34.4 37.4 41.0 42.0 44.5 47.1 49.5 52.1 50.3 51.6 52.5 53.4 53.4 53.9 MAG 0.626 0.594 0.561 0.554 0.553 0.553 0.554 0.555 0.557 0.559 0.561 0.563 0.564 0.566 0.567 0.570 S22 ANG (deg.
PAGE 11
HSG2005 S parameter (VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -141.0 -160.3 -168.8 -174.2 -177.9 179.3 176.8 174.4 172.1 170.0 168.3 166.7 165.0 163.2 161.3 159.7 MAG 0.0107 0.0118 0.0104 0.0110 0.0131 0.0145 0.0157 0.0165 0.0172 0.0190 0.0203 0.0216 0.0228 0.0242 0.0255 0.0268 S12 ANG (deg.) 60.0 37.6 31.8 37.4 38.2 43.2 44.8 46.4 47.4 49.6 48.8 52.1 53.0 53.8 53.7 54.4 MAG 0.695 0.583 0.556 0.550 0.548 0.548 0.549 0.550 0.552 0.553 0.556 0.558 0.560 0.561 0.563 0.565 S22 ANG (deg.
PAGE 12
HSG2005 Package Dimensions Package Name HWQFN-8 JEITA Package Code P-HWQFN8-2x2-0.65 RENESAS Code PWQN0008ZA-A D B MASS[Typ.] 0.009g b A 6 5 5 x M S 6 B A 7 Lp 7 Previous Code TNP-8TV 4 4 8 C0.15 ZE 0.05 E 8 0.60 0.90 1 2 3 3 ZD S y A1 A y1 S S 2 1 e Reference Symbol D E A A1 A2 b e Lp x y y1 ZD ZE Dimension in Millimeters Min 1.965 1.965 Nom 2.00 2.00 0 Max 2.075 2.075 0.80 0.05 0.3 0.65 0.35 0.10 0.08 0.10 0.350 0.
PAGE 13
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.