HSG2004 SiGe HBT High Frequency Medium Power Amplifier REJ03G0484-0400 Rev.4.00 Jun 21, 2006 Features • High Transition Frequency fT = 30 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +14.5 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A (Package name: HWQFN-8 ) 5 7 6 200 8 Note: 9 9 4 4 4 3 3 1 2 2 1 5 6 7 8 1.
HSG2004 Electrical Characteristics (Ta = 25°C) Item DC current transfer ratio Reverse Transfer Capacitance Symbol hFE Min 170 Typ 240 Max 320 Unit Cre 0.6 pF Transition Frequency fT 30.0 GHz VCE = 3 V, IC = 30 mA, f = 1 GHz Maximum Stable Gain MSG 14 15.5 dB VCE = 3 V, IC = 30 mA, f = 5.8 GHz Maximum Available Gain MAG 21 dB VCE = 3 V, IC = 30 mA, f = 2.4 GHz Maximum Available Gain MAG 12 dB VCE = 3 V, IC = 30 mA, f = 5.8 GHz PG 11.
HSG2004 DC Current Transfer Ratio vs. Collector Current VCE = 3 V Collector Current 400 300 80 60 40 20 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VCE = 3 V 200 100 1.0 10 VBE (V) Collector Current Reverse Transfer Capacitanse vs. Collector to Base Voltage 100 IC (mA) Transition Frequency vs. Collector Current 0.5 40 IE = 0 f = 1 MHz 0.4 0.3 0.2 0.1 0 1 2 3 Collector to Base Voltage VCE = 3 V MAG MSG 25 f = 1 GHz 20 1.8 GHz 2.4 GHz 15 10 5.2 GHz 5 5.
HSG2004 2.4 GHz Characteristics Evaluation Board Circuit VCC VBB:Bias Control *1 µF 1000 pF 10 pF 1000 pF *1 µF 10 pF R : 27 Ω L : 10 nH L : 5.6 nH C : 2 pF OUT C : 1 pF L : 1.8 nH IN L : 1.5 nH C : 0.9 pF C : 1 to 2 pF Pin - Pout Characteristics Pin - Pout Characteristics 3rd. Order Intermodulation Distortion (IMD3) 250 PG 200 10 150 100 5 Iop Pout / IMD3 (dBm) VCC = 3.6 V Iidle = 30 mA f = 2.4 GHz VCE = 3.6 V Iidle = 30 mA f = 2.
HSG2004 5.8 GHz Characteristics Evaluation Board Circuit VCC VBB:Bias Control *1 µF 1000 pF 20 Ω *1 µF 1000 pF 10 pF 10 pF 2 pF 2 pF 0.5 pF OUT 0.3 pF IN 0.5 pF 0.5 pF Pin - Pout Characteristics Pin - Pout Characteristics 3rd. Order Intermodulation Distortion (IMD3) 250 VCC = 3.6 V Iidle = 30 mA f = 5.8 GHz 150 15 Iop 100 10 PG 0 -20 -10 0 10 0 Fundamental (1tone) -20 -40 50 5 -40 -20 20 0 Input Power Pin (dBm) Input Power Pin (dBm) S parameter vs.
HSG2004 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 14 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -90° Condition: VCE = 3 V, IC = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3 V, IC = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.
HSG2004 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 14 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -90° Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.
HSG2004 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 Scale: 14 / div. 90° 1.5 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° -10 -5 -4 -.2 -.4 -30° -150° -3 -2 -.6 -.8 -1 -90° Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.
HSG2004 S parameter (VCE = 3 V, IC = 30 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -61.3 -53.6 -81.8 -105.0 -121.4 -134.8 -143.6 -150.6 -156.5 -161.6 -166.1 -169.8 -173.1 -176.2 -179.2 177.9 MAG 0.0103 0.0168 0.0180 0.0192 0.0214 0.0225 0.0240 0.0238 0.0242 0.0249 0.0250 0.0252 0.0258 0.0262 0.0263 0.0270 S12 ANG (deg.) 39.8 50.5 41.9 36.7 34.3 31.8 29.2 28.5 30.5 30.4 27.9 29.1 29.4 29.7 30.7 32.4 MAG 1.006 0.811 0.685 0.601 0.543 0.505 0.480 0.460 0.447 0.437 0.431 0.427 0.425 0.423 0.423 0.
HSG2004 S parameter (VCE = 3.3 V, IC = 30 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -60.3 -53.6 -81.6 -104.3 -121.1 -134.3 -143.1 -150.2 -156.1 -161.2 -165.7 -169.5 -172.8 -175.9 -178.9 178.2 MAG 0.0124 0.0146 0.0189 0.0211 0.0216 0.0229 0.0234 0.0239 0.0244 0.0247 0.0248 0.0252 0.0259 0.0258 0.0269 0.0273 S12 ANG (deg.) 106.4 57.5 39.9 42.3 34.1 32.8 31.7 29.8 30.0 28.7 29.6 27.6 30.7 30.7 31.0 32.5 MAG 0.755 0.814 0.690 0.598 0.544 0.506 0.480 0.460 0.448 0.436 0.431 0.426 0.424 0.422 0.422 0.
HSG2004 S parameter (VCE = 3.6 V, IC = 30 mA, Zo = 50 Ω) f (MHz) S11 ANG (deg.) -60.1 -53.6 -81.1 -103.8 -120.5 -133.6 -142.5 -149.7 -155.6 -160.8 -165.3 -169.1 -172.4 -175.6 -178.6 178.5 MAG 0.0070 0.0155 0.0200 0.0199 0.0221 0.0222 0.0238 0.0239 0.0243 0.0245 0.0251 0.0256 0.0253 0.0263 0.0268 0.0271 S12 ANG (deg.) 30.5 53.8 42.6 37.3 34.8 31.6 30.5 28.3 28.8 29.0 29.2 29.2 30.2 30.9 30.6 32.1 MAG 0.897 0.815 0.690 0.605 0.546 0.507 0.481 0.461 0.447 0.437 0.431 0.427 0.424 0.423 0.422 0.
HSG2004 Package Dimensions Package Name HWQFN-8 JEITA Package Code P-HWQFN8-2x2-0.65 RENESAS Code PWQN0008ZA-A D B MASS[Typ.] 0.009g b A 6 5 5 x M S 6 B A 7 Lp 7 Previous Code TNP-8TV 4 4 8 C0.15 ZE 0.05 E 8 0.60 0.90 1 2 3 3 ZD S y A1 A y1 S S 2 1 e Reference Symbol D E A A1 A2 b e Lp x y y1 ZD ZE Dimension in Millimeters Min 1.965 1.965 Nom 2.00 2.00 0 Max 2.075 2.075 0.80 0.05 0.3 0.65 0.35 0.10 0.08 0.10 0.350 0.
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