Datasheet

Section 7 ROM
Rev.4.00 Nov. 02, 2005 Page 88 of 304
REJ09B0143-0400
8. The maximum number of repetitions of the program/program-verify sequence of the same bit
is 1,000.
START
End of programming
Notes: * The RTS instruction must not be used during the following 1. and 2. periods.
1. A period between 128-byte data programming to flash memory and the P bit clearing
2. A period between dummy writing of H'FF to a verify address and verify data reading
Set SWE bit in FLMCR1
Write pulse application subroutine
Wait 1 µs
Apply Write Pulse
*
End Sub
Set PSU bit in FLMCR1
WDT enable
Disable WDT
Wait 50 µs
Set P bit in FLMCR1
Wait (Wait time=programming time)
Clear P bit in FLMCR1
Wait 5 µs
Clear PSU bit in FLMCR1
Wait 5 µs
n= 1
m= 0
No
No
No Yes
Yes
Yes
Yes
Wait 4 µs
Wait 2 µs
Wait 2 µs
Apply Write pulse
Set PV bit in FLMCR1
Set block start address as
verify address
H'FF dummy write to verify address
Read verify data
Verify data =
write data?
Reprogram data computation
Additional-programming data computation
Clear PV bit in FLMCR1
Clear SWE bit in FLMCR1
m = 1
m= 0 ?
Increment address
Programming failure
No
Clear SWE bit in FLMCR1
Wait 100 µs
No
Yes
n ≤ 6?
No
Yes
n ≤ 6 ?
Wait 100
µs
n ≤ 1000 ?
n ← n + 1
Write 128-byte data in RAM reprogram
data area consecutively to flash memory
Store 128-byte program data in program
data area and reprogram data area
Apply Write Pulse
Sub-Routine-Call
128-byte
data verification completed?
Successively write 128-byte data from additional-
programming data area in RAM to flash memory
*
Figure 7.3 Program/Program-Verify Flowchart