Datasheet

Section 20 Electrical Characteristics
Rev. 6.00 Mar. 24, 2006 Page 326 of 412
REJ09B0142-0600
20.2.6 Memory Characteristics
Table 20.8 Flash Memory Characteristics
V
CC
= 3.0 V to 5.5 V, V
SS
= 0.0 V, T
a
= –20°C to +75°C, unless otherwise specified.
Test Values
Item Symbol Condition Min Typ Max Unit
Programming time (per 128 bytes)*
1
*
2
*
4
t
P
— 7 200 ms
Erase time (per block) *
1
*
3
*
6
t
E
— 100 1200 ms
Reprogramming count N
WEC
1000 10000 — Times
Programming Wait time after SWE
bit setting*
1
x 1 — — µs
Wait time after PSU
bit setting*
1
y 50 — — µs
Wait time after P bit setting*
1
*
4
z1 1 ≤ n ≤ 6 28 30 32 µs
z2 7 ≤ n ≤ 1000 198 200 202 µs
z3 Additional-
programming
8 10 12 µs
Wait time after P bit clear*
1
α 5 — — µs
Wait time after PSU bit clear*
1
β 5 — — µs
Wait time after PV bit setting*
1
γ 4 — — µs
Wait time after dummy write*
1
ε 2 — — µs
Wait time after PV bit clear*
1
η 2 — — µs
Wait time after SWE bit clear*
1
θ 100 — — µs
Maximum
programming count*
1
*
4
*
5
N — — 1000 Times