Datasheet

HAT2168H
Rev.7.00 Sep 20, 2005 page 4 of 7
Case Temperature Tc (°C)
Static Drain to Source on State Resistance R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |y
fs
| (S)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
20
16
12
8
4
-25 0 25 50 75 100 125 150
0
I
D
= 20 A
5 A, 10 A, 20 A
V
GS
= 4.5 V
10 V
Pulse Test
330
0.1
1 10 100
0.3
10
100
30
1
0.3
3
0.1
Tc = -25°C
V
DS
= 10 V
Pulse Test
75°C
25°C
10 A, 5 A
0.1 0.3 1 3 10 30
100
20
50
10
0 5 10 15 20 3025
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
100
30
10
1
3
0.3 1 3 10 30 1000.1
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7 , duty ≤ 1 %
Ω
t
f
t
d(on)
100
50
40
30
20
10
0
20
16
12
8
4
816243240
0
I
D
= 30 A
V
GS
V
DS
V
DD
= 25 V
10 V
5 V
V
DD
= 25 V
10 V
5 V
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
t
d(off)
t
r