Datasheet

HAT2168H
Rev.7.00 Sep 20, 2005 page 3 of 7
Main Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Drain to Source On State Resistance R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0
246810
50
40
30
20
10
0
1234
5
Tc = 75°C
25°C
-25°C
40
30
20
10
0
50 100 150 200
100
10
1
0.1
0.01
0.1
0.3 1 3 10 30 100
V
DS
= 10 V
Pulse Test
500
Ta = 25°C
1 shot Pulse
PW = 10 ms
10 µs
100 µs
Operation in
this area is
limited by R
DS(on)
DC Operation Tc = 25 °C
1 ms
V
GS
= 2.4 V
10 V
4.5 V
Pulse Test
2.6 V
2.8 V
3.0 V
3.2 V
20
10
2
5
1
3301 10 100 1000
0.3
100
50
V
GS
= 4.5 V
10 V
Pulse Test
250
200
150
100
50
0
4 8 12 16 20
Pulse Test
I
D
= 20 A
5 A
10 A