Datasheet

Rev.7.00 Sep 20, 2005 page 1 of 7
HAT2168H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0046-0700
Rev.7.00
Sep 20, 2005
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R
DS(on)
= 6 mΩ typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
1
2
3
4
5
1, 2, 3 Source
4 Gate
5 Drain
G
D
SSS
4
123
5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
30 A
Drain peak current I
D(pulse)
Note1
120 A
Body-drain diode reverse drain current I
DR
30 A
Avalanche current I
AP
Note 2
15 A
Avalanche energy E
AR
Note 2
22 mJ
Channel dissipation Pch
Note3
15 W
Channel to Case Thermal Resistance θch-C 8.33 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25
°C, Rg ≥ 50 Ω
3. Tc = 25
°C