Product data
92
22.2.5 Flash Memory Characteristics
Table 22.13 shows the flash memory characteristics.
Table 22.13 Flash Memory Characteristics
Conditions (5 V version): V
CC
= 5.0 V ± 10%, V
SS
= 0 V, T
a
= 0 to +75°C (regular specifications),
T
a
= 0 to +85°C (wide-range specifications)
Conditions for low-voltage version:V
CC
= 3.0 V to 3.6 V, V
SS
= 0 V, T
a
= 0 to +75°C
(Programming/erasing operating temperature)
Item Symbol Min Typ Max Unit
Test
Condition
Programming time
*
1
*
2
*
4
tP — 10 200 ms/
32 bytes
Erase time
*
1
*
3
*
5
tE — 100 1200 ms/
block
Reprogramming count N
WEC
— — 100 Times
Programming Wait time after
SWE-bit setting
*
1
x 10——µs
Wait time after
PSU-bit setting
*
1
y 50——µs
Wait time after
P-bit setting
*
1
*
4
z 150 — 200 µs
Wait time after
P-bit clear
*
1
α 10——µs
Wait time after
PSU-bit clear
*
1
β 10——µs
Wait time after
PV-bit setting
*
1
γ 4 ——µs
Wait time after
dummy write
*
1
ε 2 ——µs
Wait time after
PV-bit clear
*
1
η 4 ——µs
Maximum
programming
count
*
1
*
4
*
5
N — — 1000 Times z = 200 µs