Datasheet

Section 7 ROM
Rev. 3.00 Mar. 15, 2006 Page 89 of 526
REJ09B0060-0300
Section 7 ROM
The features of the 96-kbyte flash memory built into the flash memory (F-ZTAT) version are
summarized below.
• Programming/erase methods
 The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 1 kbyte × 4 blocks, 28 kbytes × 1 block,
16 kbytes × 2 blocks, and 32 kbytes × 1 block for H8/36049F. To erase the entire flash
memory, each block must be erased in turn.
• Reprogramming capability
 The flash memory can be reprogrammed up to 1,000 times.
• On-board programming
 On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
• Programmer mode
 Flash memory can be programmed/erased in programmer mode using a PROM
programmer, as well as in on-board programming mode.
• Automatic bit rate adjustment
 For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
• Programming/erasing protection
 Sets software protection against flash memory programming/erasing.
• Power-down mode
 Operation of the power supply circuit can be partly halted in subactive mode. As a result,
flash memory can be read with low power consumption.