Datasheet

Rev.6.00 Oct.28.2004 page 765 of 1016
REJ09B0138-0600H
22.7.5 D/A Conversion Characteristics
Table 22-42 lists the D/A conversion characteristics
Table 22-42 D/A Conversion Characteristics
Condition B: V
CC
= AV
CC
= 5.0 V ± 10%, V
ref
= 4.5 V to AV
CC
, V
SS
= AV
SS
= 0 V,
ø = 2 to 20 MHz, T
a
= –20 to +75°C (regular specifications),
T
a
= –40 to +85°C (wide-range specifications)
Condition C: V
CC
= AV
CC
= 3.0 V to 5.5 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V, ø = 2 to 13 MHz, T
a
= –20 to +75°C (regular specifications),
T
a
= –40 to +85°C (wide-range specifications)
Condition B Condition C
Item Min Typ Max Min Typ Max Unit Test Conditions
Resolution 888888bit
Conversion time — — 10 — — 10 µs 20-pF capacitive
load
Absolute accuracy — ±1.0 ±1.5 — ±2.0 ±3.0 LSB 2-MΩ resistive load
——±1.0 — — ±2.0 LSB 4-MΩ resistive load
22.7.6 Flash Memory Characteristics
Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (1)
Conditions: V
CC
= 5.0 V ± 10%, AV
CC
= 5.0 V ± 10%, V
ref
= 4.5 V to AV
CC
, V
SS
= AV
SS
= 0V
T
a
= 0 to +75°C (Programming/erasing operating temperature, regular specifications), T
a
= 0 to + 85°C
(Programming/erasing operating temperature, wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Condition
Programming time*
1
*
2
*
4
t
P
— 10 200 ms/32 bytes
Erase time*
1
*
3
*
5
t
E
— 100 1200 ms/block
Reprogramming count N
WEC
— — 100 Times
Programming Wait time after SWE bit
setting*
1
x10——µs
Wait time after PSU bit
setting*
1
y50——µs
Wait time after P bit
setting*
1
*
4
z 150 — 200 µs
Wait time after P bit clear*
1
α 10 — — µs
Wait time after PSU bit
clear*
1
β 10 — — µs
Wait time after PV bit
setting*
1
γ 4—— µs
Wait time after H'FF dummy
write*
1
ε 2—— µs