Datasheet

Rev.6.00 Oct.28.2004 page 724 of 1016
REJ09B0138-0600H
22.3.5 D/A Conversion Characteristics
Table 22-20 lists the D/A conversion characteristics.
Table 22-20 D/A Conversion Characteristics
Conditions: V
CC
= AV
CC
= 5.0 V ± 10%, V
ref
= 4.5 V to AV
CC
, V
SS
= AV
SS
= 0 V,
φ = 10 to 20 MHz, T
a
= –20 to +75°C (regular specifications),
T
a
= –40 to +85°C (wide-range specifications)
Item Min Typ Max Unit Test Conditions
Resolution 8 8 8 bits
Conversion time — — 10 µs 20-pF capacitive load
Absolute accuracy — ±1.0 ±1.5 LSB 2-MΩ resistive load
——±1.0 LSB 4-MΩ resistive load
22.3.6 Flash Memory Characteristics
Table 22-21 Flash Memory Characteristics (HD64F2398F20, HD64F2398TE20)
Conditions: V
CC
= 5.0 V ± 10%, AV
CC
= 5.0 V ± 10%, V
ref
= 4.5 V to AV
CC
, V
SS
= AV
SS
= 0V
T
a
= 0 to +75°C (Programming/erasing operating temperature, regular specifications), T
a
= 0 to + 85°C
(Programming/erasing operating temperature, wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Condition
Programming time*
1
*
2
*
4
t
P
— 10 200 ms/128
bytes
Erase time*
1
*
3
*
6
t
E
— 50 1000 ms/block
Reprogramming count N
WEC
— — 100 Times
Programming Wait time after SWE bit
setting*
1
x1——µs
Wait time after PSU bit
setting*
1
y50——µs
Wait time after P bit
setting*
1
*
4
z (z1) — — 30 µs1 ≤ n ≤ 6
(z2) — — 200 µs 7 ≤ n ≤ 1000
(z3) — — 10 µs Additional
program-
ming wait
Wait time after P bit clear*
1
α 5—— µs
Wait time after PSU bit
clear*
1
β 5—— µs
Wait time after PV bit
setting*
1
γ 4—— µs
Wait time after H'FF dummy
write*
1
ε 2—— µs
Wait time after PV bit clear*
1
η 2—— µs