Datasheet

Rev.6.00 Oct.28.2004 page 611 of 1016
REJ09B0138-0600H
19.13.6 Auto-Erase Mode
AC Characteristics
Table 19-25 AC Characteristics in Auto-Erase Mode
Conditions: V
CC
= 5.0 V ±10%, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 — µs
CE hold time t
ceh
0—ns
CE setup time t
ces
0—ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
Status polling start time t
ests
1—ms
Status polling access time t
spa
— 150 ns
Memory erase time t
erase
100 40000 ms
WE rise time t
r
—30ns
WE fall time t
f
—30ns
Erase setup time t
ens
100 — ns
Erase end setup time t
enh
100 — ns
CE
FWE
Address
Data
I/O
6
I/O
7
OE
WE
t
ests
t
nxtc
t
nxtc
t
ces
t
ceh
t
dh
CL
in
DL
in
t
wep
t
ens
I/O
0
to I/O
5
= 0
H'20 H'20
t
enh
Erase normal end
confirmation signal
t
f
t
r
t
ds
t
spa
t
erase
(100 to 40000 ms)
Erase end identification
signal
Figure 19-30 Auto-Erase Mode Timing Waveforms
Notes on Use of Auto-Erase Mode
• Auto-erase mode supports only entire memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O
6
. Alternatively, status read mode can also be used for this purpose
(I/O
7
status polling uses the auto-erase operation end identification pin).