Datasheet

Section 25 Electrical Characteristics
Rev.6.00 Mar. 18, 2009 Page 939 of 980
REJ09B0050-0600
25.3.6 Flash Memory Characteristics
Table 25.38 Flash Memory Characteristics (0.18-μm F-ZTAT Version)
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V, T
a
= 0°C to 75°C (Programming/Erasing Operating Temperature
Range: Normal Specifications), T
a
= 0°C to 85°C (Programming/Erasing Operating
Temperature Range: Extended Temperature Range Specifications)
Item Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
⎯ 1 10 ms/
128 bytes
Erase time
*
1
*
2
*
4
t
E
⎯ 250 1500 ms/
4 kbytes
⎯ 500 4000 ms/
32 kbytes
⎯ 750 6500 ms/
64 kbytes
Programming time (total)
*
1
*
2
*
4
Σtp ⎯ 2 6 s/256 kbytes T
a
= 25°C
⎯ 3 9 s/384 kbytes
⎯ 4 12 s/512 kbytes
Erase time (total)
*
1
*
2
*
4
Σt
E
⎯ 7 20 s/All blocks T
a
= 25°C
Σt
PE
⎯ 9 26 s/256 kbytes T
a
= 25°C
⎯ 10 29 s/384 kbytes
Programming and erase time
(total)
*
1
*
2
*
4
⎯ 11 32 s/512 kbytes
Rewrite times N
WEC
100
*
3
⎯ ⎯ Times
Data storage time
*
4
t
DRP
10 ⎯ ⎯ Year
Notes: 1. Actual programming and erase times are dependent on data characteristics.
2. Programming and erase times do not include data transfer time.
3. The minimum number of times for which all characteristics are guaranteed. (The
guaranteed range is from 1 to the minimum number of times.)
4. Rewrite characteristics are for the operating range including the minimum value.