Datasheet

Section 25 Electrical Characteristics
Rev.6.00 Mar. 18, 2009 Page 924 of 980
REJ09B0050-0600
25.2.5 Flash Memory Characteristics
Table 25.25 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V, T
a
= 0°C to 75°C (program/erase operating temperature range:
regular specifications), T
a
= 0°C to 85°C (program/erase operating temperature
range: wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
— 10 200 ms/
128 bytes
Erase time
*
1
*
3
*
6
t
E
— 50 1000 ms/
block
Rewrite times N
WEC
— — 100 Times
Wait time after
SWE bit setting
*
1
x 1 — — μs
Wait time after
PSU bit setting
*
1
y 50 — — μs
z1 — — 30 μs 1 ≤ n ≤ 6
z2 — — 200 μs 7 ≤ n ≤ 1000
Wait time after
P bit setting
*
1
*
4
z
z3 — — 10 μs Additional
program-
ming wait
Programming
Wait time after
P bit clearing
*
1
α 5 — — μs
Wait time after
PSU bit clearing
*
1
β 5 — — μs
Wait time after
PV bit setting
*
1
γ 4 — — μs
Wait time after
H'FF dummy
write
*
1
ε 2 — — μs
Wait time after
PV bit clearing
*
1
η 2 — — μs
Wait time after
SWE bit clearing
*
1
θ 100 — — μs
Maximum number
of writes
*
1
*
4
N — — 1000
*
5
Times