Datasheet

Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 717 of 980
REJ09B0050-0600
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
The flash memory has the following features. Figure 20.1 shows a block diagram of the flash
memory.
20.1 Features
Size
Product Classification ROM Size ROM Address
H8S/2368F HD64F2368 512 kbytes H'000000 to H'07FFFF
(Modes 3 to 5 and 7)
H8S/2364F HD64F2364 384 kbytes H'000000 to H'05FFFF
(Modes 3 to 5 and 7)
H8S/2362F HD64F2362 256 kbytes
H8S/2361F HD64F2361
H8S/2360F HD64F2360
H'000000 to H'03FFFF
(Modes 3 to 5 and 7)
Two flash-memory MATs according to LSI initiation mode
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
The user memory MAT is initiated at a power-on reset in user mode: 512 kbytes
(H8S/2368F), 384 kbytes (H8S/2364F), 256 kbytes (H8S/2362F, H8S/2361F, H8S/2360F)
The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
Programming/erasing interface by the download of on-chip program
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
The user branch is also supported.
Programming/erasing time
The flash memory programming time is 1 ms (typ) in 128-byte simultaneous programming and
8 µs per byte. The erasing time is 750 ms (typ) per 64-kbyte block.
Number of programming
The number of flash memory programming can be up to 100 times.